2SD2374
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2374
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar 2SD2374
2SD2374
Datasheet (PDF)
..1. Size:45K panasonic
2sd2374.pdf 
Power Transistors2SD2374, 2SD2374ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1548 and 2SB1548AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 9.9 0.3Low collector to emitter saturation voltage VCE(sat)2.9 0.2Full-pack package which can be installed to the heat sink withone scr
..2. Size:115K inchange semiconductor
2sd2374 2sd2374a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified
..3. Size:199K inchange semiconductor
2sd2374.pdf
isc Silicon NPN Power Transistor 2SD2374DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
0.1. Size:199K inchange semiconductor
2sd2374a.pdf
\isc Silicon NPN Power Transistor 2SD2374ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC
8.1. Size:80K panasonic
2sd2375.pdf
Power Transistors2SD2375Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power amplification with high forward current transfer ratio 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE which has satisfactory lin-earity Full-pack package which can be installed to the heat sink with onescrew1.40.22.60.11.60.20.8
8.2. Size:181K inchange semiconductor
2sd237.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD237DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
