2SD2374 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2374
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220F
2SD2374 Transistor Equivalent Substitute - Cross-Reference Search
2SD2374 Datasheet (PDF)
2sd2374.pdf
Power Transistors2SD2374, 2SD2374ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1548 and 2SB1548AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 9.9 0.3Low collector to emitter saturation voltage VCE(sat)2.9 0.2Full-pack package which can be installed to the heat sink withone scr
2sd2374 2sd2374a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified
2sd2374.pdf
isc Silicon NPN Power Transistor 2SD2374DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
2sd2374a.pdf
\isc Silicon NPN Power Transistor 2SD2374ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC
2sd2375.pdf
Power Transistors2SD2375Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power amplification with high forward current transfer ratio 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE which has satisfactory lin-earity Full-pack package which can be installed to the heat sink with onescrew1.40.22.60.11.60.20.8
2sd237.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD237DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
