2SD5075T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD5075T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3.5
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SD5075T
2SD5075T
Datasheet (PDF)
..1. Size:116K inchange semiconductor
2sd5075t.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS Color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vo
7.1. Size:188K inchange semiconductor
2sd5075.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5075DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
8.1. Size:189K inchange semiconductor
2sd5072.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5072DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT
8.2. Size:188K inchange semiconductor
2sd5074.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5074DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
8.3. Size:189K inchange semiconductor
2sd5071.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5071DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT
8.4. Size:188K inchange semiconductor
2sd5076.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5076DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
8.5. Size:232K inchange semiconductor
2sd5070.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
Otros transistores... 2SA1771
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