BU2722AF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2722AF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1700 V

Tensión colector-emisor (Vce): 825 V

Tensión emisor-base (Veb): 7.5 V

Corriente del colector DC máxima (Ic): 10 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 4.5

Encapsulados: TO3PFA

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BU2722AF datasheet

 ..1. Size:57K  philips
 bu2722af 2.pdf pdf_icon

BU2722AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M

 ..2. Size:80K  jmnic
 bu2722af.pdf pdf_icon

BU2722AF

Product Specification www.jmnic.com Silicon Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

 ..3. Size:121K  inchange semiconductor
 bu2722af.pdf pdf_icon

BU2722AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 7.1. Size:58K  philips
 bu2722ax 1.pdf pdf_icon

BU2722AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M

MOSTRAR MÁS

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