Биполярный транзистор BU2722AF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU2722AF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 825 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7.5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Статический коэффициент передачи тока (hfe): 4.5
Корпус транзистора: TO3PFA
BU2722AF Datasheet (PDF)
bu2722af 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M
bu2722af.pdf
Product Specification www.jmnic.com Silicon Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Colle
bu2722af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
bu2722ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M
bu2722ax.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2722AX DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Vo
bu2722df 1.pdf
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2722DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable foroperation up to 64 kHz, designed to withstand VCES pulses
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050