BU2722AF Datasheet, Equivalent, Cross Reference Search
Type Designator: BU2722AF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 825 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 10 A
Forward Current Transfer Ratio (hFE), MIN: 4.5
Noise Figure, dB: -
Package: TO3PFA
BU2722AF Transistor Equivalent Substitute - Cross-Reference Search
BU2722AF Datasheet (PDF)
bu2722af 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M
bu2722af.pdf
Product Specification www.jmnic.com Silicon Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Colle
bu2722af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
bu2722ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M
bu2722ax.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2722AX DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Vo
bu2722df 1.pdf
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2722DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable foroperation up to 64 kHz, designed to withstand VCES pulses
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
