BU2722AF Specs and Replacement

Type Designator: BU2722AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector-Emitter Voltage |Vce|: 825 V

Maximum Emitter-Base Voltage |Veb|: 7.5 V

Maximum Collector Current |Ic max|: 10 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 4.5

Noise Figure, dB: -

Package: TO3PFA

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BU2722AF datasheet

 ..1. Size:57K  philips

bu2722af 2.pdf pdf_icon

BU2722AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M... See More ⇒

 ..2. Size:80K  jmnic

bu2722af.pdf pdf_icon

BU2722AF

Product Specification www.jmnic.com Silicon Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle... See More ⇒

 ..3. Size:121K  inchange semiconductor

bu2722af.pdf pdf_icon

BU2722AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2722AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒

 7.1. Size:58K  philips

bu2722ax 1.pdf pdf_icon

BU2722AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M... See More ⇒

Detailed specifications: BU2506AX, BU2515DX, BU2520DW, BU2525AW, BU2527DX, BU2708DF, BU2720AX, BU2720DF, S9014, BU2725AX, BU2725DX, BU2727AF, BU2727AW, BU2727DF, BU508AW, BU508AX, BU508DW

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