BU2727AW Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2727AW  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 1700 V

Tensión colector-emisor (Vce): 825 V

Tensión emisor-base (Veb): 7.5 V

Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5.5

Encapsulados: TO247

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BU2727AW datasheet

 ..1. Size:55K  philips
 bu2727aw 1.pdf pdf_icon

BU2727AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDIT

 ..2. Size:96K  inchange semiconductor
 bu2727aw.pdf pdf_icon

BU2727AW

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AW DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(

 7.1. Size:52K  philips
 bu2727a 1.pdf pdf_icon

BU2727AW

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CON

 7.2. Size:53K  philips
 bu2727af 1.pdf pdf_icon

BU2727AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM C

MOSTRAR MÁS

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