BU2727AW Datasheet, Equivalent, Cross Reference Search
Type Designator: BU2727AW
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 825 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 12 A
Forward Current Transfer Ratio (hFE), MIN: 5.5
Noise Figure, dB: -
Package: TO247
BU2727AW Transistor Equivalent Substitute - Cross-Reference Search
BU2727AW Datasheet (PDF)
bu2727aw 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflectioncircuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2727aw.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AW DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(
bu2727a 1.pdf
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflectioncircuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to1700V.QUICK REFERENCE DATASYMBOL PARAMETER CON
bu2727af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM C
bu2727ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM C
bu2727af.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(
bu2727a.pdf
isc Silicon NPN Power Transistor BU2727ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
