BU2727DF Todos los transistores

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2727DF DESCRIPTION With TO-3PFa package High voltage,high speed Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS... See More ⇒

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V V... See More ⇒

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDIT... See More ⇒

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CON... See More ⇒

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM C... See More ⇒

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM C... See More ⇒

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AF DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(... See More ⇒

isc Silicon NPN Power Transistor BU2727A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 825V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AW DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(... See More ⇒