Биполярный транзистор BU2727DF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU2727DF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 825 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7.5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Статический коэффициент передачи тока (hfe): 5.5
Корпус транзистора: TO3PFA
BU2727DF Datasheet (PDF)
bu2727df.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2727DF DESCRIPTION With TO-3PFa package High voltage,high speed Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
bu2727dx.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V V
bu2727aw 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflectioncircuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2727a 1.pdf
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflectioncircuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to1700V.QUICK REFERENCE DATASYMBOL PARAMETER CON
bu2727af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM C
bu2727ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM C
bu2727af.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(
bu2727a.pdf
isc Silicon NPN Power Transistor BU2727ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
bu2727aw.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AW DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050