BU2727DF Datasheet and Replacement

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2727DF DESCRIPTION With TO-3PFa package High voltage,high speed Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V V

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflectioncircuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflectioncircuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to1700V.QUICK REFERENCE DATASYMBOL PARAMETER CON

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM C

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(

isc Silicon NPN Power Transistor BU2727ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AW DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(