T430 Todos los transistores

 ..1. Size:130K  inchange semiconductor
 t430.pdf

NPN T430 TO-3PN 1 2 3 (TC=25 )

 0.1. Size:65K  njs
 dt430.pdf

 0.2. Size:729K  cet
 cet4301.pdf

CET4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6.3A, RDS(ON) = 44m @VGS = -10V. RDS(ON) = 68m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-S

 0.3. Size:75K  aosemi
 aot430.pdf

AOT430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT430 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 80 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 0.4. Size:839K  cn vbsemi
 aot430.pdf

AOT430 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backlighti

 0.5. Size:260K  inchange semiconductor
 aot430.pdf

isc N-Channel MOSFET Transistor AOT430 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose