All Transistors. T430 Datasheet


T430 Datasheet, Equivalent, Cross Reference Search

Type Designator: T430

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Forward Current Transfer Ratio (hFE), MIN: 800

Noise Figure, dB: -

Package: TO3PN

T430 Transistor Equivalent Substitute - Cross-Reference Search


T430 Datasheet (PDF)

0.1. dt430.pdf Size:65K _njs


0.2. t430.pdf Size:130K _inchange_semiconductor


无锡固电半导体 产品说明书 硅 NPN 大功率晶体管 T430 特征 ·TO-3PN 外形 ·高电压,高电流 ·低饱合压降 ·达林顿晶体管 用途 ·发电机励磁开关用 ·汽车点火用 ·开关调节器 ·马达控制应用 脚位排列 脚位 名称 1 基极 2 集电极 3 发射极 最大额定值 (TC=25℃) 符号 参数 条件 额定

 0.3. cet4301.pdf Size:729K _cet


CET4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-S

0.4. aot430.pdf Size:75K _aosemi


AOT430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT430 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 80 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) < 11.5mΩ (VGS = 10V) switching and general purpose applications. Standard Product AOT430 is Pb-free (m

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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