2SD2413 Todos los transistores

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4 0.08 Mini Power type package, allowing downsizing of th

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4 0.08 Mini Power type package, allowing downsizing of th

2SD2413 TRANSISOR (NPN) FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking 1S 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Volta

2SD2413 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 2.6 Features 4.25 2.4 3.75 High collector to base voltage VCBO 0.8 MIN High collector to emitter voltage VCEO 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Large collector power dissipation PC 0.37 1.5 3.0 Low collector to emitter saturation voltage VCE(

SMD Type Transistors NPN Transistors 2SD2413 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltag

2SD2414(SM) TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Unit mm Power Amplifier Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) (at I = 4 A) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base vo

Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. 45 Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. 45 Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

SMD Type Transistors NPN Transistors 2SD2416 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=50V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt