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2SD2413 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2413

Código: 1S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 40 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: SOT89

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2SD2413 Datasheet (PDF)

1.1. 2sd2413 e.pdf Size:40K _panasonic

2SD2413
2SD2413

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4 0.08 Mini Power type package, allowing downsizing of the equipm

1.2. 2sd2413.pdf Size:37K _panasonic

2SD2413
2SD2413

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4 0.08 Mini Power type package, allowing downsizing of the equipm

 1.3. 2sd2413.pdf Size:580K _htsemi

2SD2413
2SD2413

2SD2413 TRANSISOR (NPN) FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking:1S 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 40

1.4. 2sd2413.pdf Size:208K _lge

2SD2413
2SD2413

2SD2413 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 2.6 Features 4.25 2.4 3.75 High collector to base voltage VCBO 0.8 MIN High collector to emitter voltage VCEO 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Large collector power dissipation PC 0.37 1.5 3.0 Low collector to emitter saturation voltage VCE(sat

 1.5. 2sd2413.pdf Size:817K _kexin

2SD2413
2SD2413

SMD Type Transistors NPN Transistors 2SD2413 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltag

Otros transistores... D39J1-3 , D39J2 , D39J3 , D39J5 , D39J6 , D39J7 , D39J8 , D39J9 , S9014 , D39V2 , D39V3 , D40C1 , D40C2 , D40C3 , D40C4 , D40C5 , D40C6 .

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