2SD2413 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD2413Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.45Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.4 0.08Mini Power type package, allowing downsizing of th

Transistor2SD2413Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.45Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.4 0.08Mini Power type package, allowing downsizing of th

2SD2413TRANSISOR (NPN)FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking:1S 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitsVCBO Collector-Base Volta

2SD2413SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.63 1.81.41.42.6Features 4.252.43.75 High collector to base voltage VCBO 0.8MIN High collector to emitter voltage VCEO 0.530.400.480.442x)0.13 B0.35 Large collector power dissipation PC 0.371.53.0 Low collector to emitter saturation voltage VCE(

SMD Type TransistorsNPN Transistors2SD2413SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltag

2SD2414(SM) TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Unit: mm Power Amplifier Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at I = 4 A) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 VCollector-emitter voltage VCEO 80 VEmitter-base vo

Transistor2SD2416Silicon NPN epitaxial planer type darlingtonFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High foward current transfer ratio hFE.60V zener diode built in between collector and base.45Darlington connection.Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

Transistor2SD2416Silicon NPN epitaxial planer type darlingtonFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High foward current transfer ratio hFE.60V zener diode built in between collector and base.45Darlington connection.Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

SMD Type TransistorsNPN Transistors2SD2416SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=50VC0.42 0.10.46 0.1B1.Base2.CollectorE 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt