All Transistors. 2SD2413 Datasheet

 

2SD2413 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD2413

SMD Transistor Code: 1S

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT89

2SD2413 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2413 Datasheet (PDF)

1.1. 2sd2413.pdf Size:37K _panasonic

2SD2413
2SD2413

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45° Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4± 0.08 Mini Power type package, allowing downsizing of th

1.2. 2sd2413 e.pdf Size:40K _panasonic

2SD2413
2SD2413

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45° Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4± 0.08 Mini Power type package, allowing downsizing of th

 1.3. 2sd2413.pdf Size:580K _htsemi

2SD2413
2SD2413

2SD2413 TRANSISOR (NPN) FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking:1S 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Volta

1.4. 2sd2413.pdf Size:208K _lge

2SD2413
2SD2413

 2SD2413 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 2.6 Features 4.25 2.4 3.75 High collector to base voltage VCBO 0.8 MIN High collector to emitter voltage VCEO 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Large collector power dissipation PC 0.37 1.5 3.0 Low collector to emitter saturation voltage VCE(

 1.5. 2sd2413.pdf Size:817K _kexin

2SD2413
2SD2413

SMD Type Transistors NPN Transistors 2SD2413 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltag

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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