A94 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A94 TRANSISTOR (PNP) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC C

A94 TRANSISTOR (PNP) FEATURES SOT-89-3L High voltage 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Units 3 1. BASE VCBO Collector-Base Voltage -400 V 2. COLLECTOR VCEO Collector-Emitter Voltage -400 V 3. EMITTER VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Tj Junction

A94(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V Collector Current -Continuous IC -0.2 A Collector Power Dissipation PC 0.625 W Junct

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) TO-92 FEATURES FEATURES FEATURES FEATURES 1.EMITTER High voltage 2.BASE MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 3.COLLECTOR 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO Collector

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A94 TRANSISTOR (PNP) 1.EMITTER 2.BASE FEATURES High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Colle

KSA940 Vertical Deflection Output Power Amplifier Complement to KSC2073 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 150 V VCEO Collector-Emitter Voltage - 150 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 1.5 A IB Base Curr

SQJA94EP www.vishay.com Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 S www.vishay.com/doc?99912 2 S 3 D S 4 1 G Top View Bottom View PRODUCT SUMMARY G VDS (V) 80

CMLTA94 www.centralsemi.com SURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGE DESCRIPTION PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CMLTA94 is a PNP high voltage transistor, epoxy molded in a space saving SOT-563 surface mount package and designed for extremely high voltage applications. MARKING CODE 94C SOT-563 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage V

CMPTA94 www.centralsemi.com SURFACE MOUNT HIGH VOLTAGE DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE C94 SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 400 V Collector-Emitter Volt

CZTA94 www.centralsemi.com SURFACE MOUNT HIGH VOLTAGE DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZTA94 type is a surface mount epoxy molded PNP silicon planar epi- taxial transistors designed for extremely high voltage applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 400 V

SI I O A A SA HI H O TA T A SISTO ISS A H T i I I TI T I i II i i TO A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I II i V V I I V I i V V I I V I II I V V I II I V V i I V V I II i V V I

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC). DSA9402 Silicon PNP epitaxial planar type For general amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free package Pin Name 1. Base Packaging 2

UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage V =-400V CEO * Low collector-Emitter saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA94L-AB3-R MPSA94G-AB3-R SOT-89 B C E Tape Reel MPSA94L-T92-B MPSA94G-T92-B TO-92 E B C

UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage V =-400V CEO * Collector Dissipation P =625mW D(MAX) * Low collector-Emitter saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZTA94L-AA3-R PZTA94G-AA3-R SOT-223

UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 * Collector-Emitter Voltage V = -400V CEO * Collector Dissipation P = 350mW C(MAX) * Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2 SOT-23 * Telephone Switching (JEDEC TO-236) * High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num

BCPA94 -0.5 A, -400 V PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The BCPA94 is designed for application requires high voltage. SOT-89 FEATURES High Voltage VCEO=400V (min) at IC=1mA High Current gain IC=300mA at 25 C Complementary with BCPA44 MA

PZTA94 PNP Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA94 is designed for application requires high voltage. Features *High Current Gain IC=300mA at 25 oC *High Voltage VCEO=400V (min) at IC=1mA Millimeter Millimeter *Complementary With PZTA44 REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.

MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E MMBTA44 4D D H J F G SYMBOL Millimeter Millimeter REF. REF. Collector Min. Max. Min.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSA940, CSC2073 CSA940 PNP PLASTIC POWER TRANSISTOR CSC2073 NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9452 N-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 38m @10V 20V 50m @4.5V 4A 80m @2.5V 1. GATE 2. DRAIN Description 3. SOURCE The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate Transistors SOT-223 PZTA94 TRANSISTOR (PNP) FEATURES 1. BASE High Voltage Driver Applications 2. COLLECTOR MARKING 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitte

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET SOT-89-3L Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low 1. GATE on- resistance and cost-effectiveness. 2. DRAIN 3. SOURCE 1 2 2 3 Maximum ratings (

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SA940 TRANSISTOR (PNP) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Wide Safe Operating Area. 3. EMITTER Complementary to 2SC2703 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -15

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION With TO-220 package Complement to type 2SC2073 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col

SEMICONDUCTOR MPSA94 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. Complementary to MPSA44. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO -400 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0.50 K

SEMICONDUCTOR MPSA94A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO -480 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0.50 K 0.55 MAX VCEO -480 V Collect

MMBTA94 TRANSISTOR(PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -200 mA C I Collector Current -Pulsed -300 mA C

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA94 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO -400 V Collector-Emitter Voltage - Collec

2SA940(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Co

WTMA94 PNP Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 *High Voltage 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -400 VCEO V Collector-Emitter Voltage -400 VEBO V Emitter-Base Voltage -5 Collector Current - Continuous IC mA -200 ICM Collector Current - Pulsed mA -300 Collect

MPSA94 High-Voltage PNP Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -400 Vdc Collector-Base Voltage VCBO -400 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150

PZTA94 High-Voltage PNP Transistor COLLECTOR 2,4 4 Surface Mount 1. BASE 2.COLLECTOR 3.EMITTER 1 1 2 4.COLLECTOR P b Lead(Pb)-Free 3 BASE 3 SOT-223 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V CEO -400 Vdc VCBO Collector-Base Voltage -400 Vdc Emitter-Base VOltage VEBO -6.0 Vdc IC mAdc Collector Current-Continuous -300 PD W Total Dev

MMBTA94 COLLECTOR High-Voltage PNP Transistor Surface Mount 3 SOT-23 3 P b Lead(Pb)-Free 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -400 Vdc CEO Collector-Base Voltage VCBO -400 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current-Continuous IC mAdc -150 Thermal Characteristics Characteristics Symbol Max Unit Maximum Power

FM120-M WILLAS THRU MMBTA94LT1 PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200V TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent powe We declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance. SOD-123H compliance with RoHS re

Spec. No. HN200209 HI-SINCERITY Issued Date 2000.11.01 Revised Date 2004.08.17 MICROELECTRONICS CORP. Page No. 1/4 HMBTA94 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBTA94 is designed for application that requires high voltage. SOT-23 Features High Breakdown Voltage VCEO=400(Min.) at IC=1mA Complementary to HMBTA44 Absolute Maximum Ratings Maximum Temp

Spec. No. HE6355 HI-SINCERITY Issued Date 1993.01.15 Revised Date 2005.03.30 MICROELECTRONICS CORP. Page No. 1/5 HMPSA94 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMPSA94 is designed for application that requires high voltage. Features TO-92 High Breakdown Voltage 400V(Min.) at IC=1mA High Current IC=300mA at 25 C Complementary to HMPSA44 Absolute Max

Spec. No. C309A3 Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date 2011.12.13 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor MPSA94 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.08V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to MPSA44. Pb-f

Spec. No. C309N3-H Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date 2011.02.17 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400V IC -0.15A VCESAT(max) -0.3V BTPA94N3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation a

Spec. No. C309A3 Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date Page No. 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTNA44A3. Symbol Outline

MPSA94 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Collector P

MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base

MPSA94 PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 400 V Collector Emitter Voltage -VCEO 400 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 300 mA Power Dissipation

A940 PNP silicon APPLICATION Low Noise Audio Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage -150 V VCBO Collector-emitter voltage -150 V VCEO TO-220 1 Emitter-base voltage -5 V VEBO 1.Base 2.Collector 3.Emitter Collector current -1.5 A IC Base current -0.5 A IB C

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA940 APPLICATIONS Vertical Deflection Output Power Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA94 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation 625mW

2SA940A(3CA940A) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, vertical output applications. 2SC2073A(3DA2073A) Features Complementary to 2SC2073A(3DA2073A). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -150 V CBO V -1

SEMICONDUCTOR MMBTA94 TECHNICAL DATA PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product 2 compliance with RoHS requirements. 1 Description SOT 23 The MMBTA94 is designed for application that requires high voltage. COLLECTOR Features 3 High Breakdown Voltage VCEO=400(Min.) at IC=1mA 1 BASE DEVICE MARKING 2 MMB TA94LT1G = 4Z EMITTER Absolute

SMD Type MOSFET P-Channel MOSFET A9451 Features VDS (V) =-20V 1.70 0.1 ID =-2.3A (VGS = 12V) RDS(ON) 0.135 (VGS =-4.5V) RDS(ON) 0.240 (VGS =-2.5V) Marking A9451 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12

SMD Type Transistors PNP Transistors MMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA44 12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40

SMD Type MOSFET N-Channel MOSFET A9452 Features VDS (V) = 20V 1.70 0.1 ID = 4 A (VGS = 12V) RDS(ON) 0.038 (VGS = 10V) RDS(ON) 0.05 (VGS = 4.5V) RDS(ON) 0.08 (VGS = 2.5V) Marking A9452 0.42 0.1 0.46 0.1 D G 1.Gate 2.Drain S 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt

PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET 30 Volts 2.9 Amperes VOLTAGE CURRENT FEATURES RDS(ON), VGS@10V,ID@3.1A

TRANSISTOR A940C MAIN CHARACTERISTICS FEATURES IC -1.5A Epitaxial silicon VCEO -150V High switching speed PC 25W RoHS RoHS product C2073 Complementary to C2073 APPLICATIONS High frequency switch power supply Commonly power amplifier

2SB941(3CA941) PNP /SILICON PNP TRANSISTOR ./Purpose For low-frequency power amplification. HFE - TO-220 /Feature High forward current transfer ratio Hfe which has satisfactory linearity,low collector to emi

2SA940(3CA940) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, vertical output applications. 2SC2073(3DA2073) Features Complementary to 2SC2073(3DA2073). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -150 V CBO V -150 V

MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -200 mA C I Collector Current -Pulsed

Silicon FS Trench IGBT CRG15T60A94S CRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage

2SA940 PNP / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1 Base PIN 2 Collector 1 2SC2073 2 3 PIN 3 Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical ou

www.msksemi.com MMBTA94-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Breakdown Voltage 1. BASE MARKING 4D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Co

MMBTA94 PNP Transistor Features SOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DC current gain. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Units Collector Base Voltage -V 400 V CBO Collector Emitter Voltage -V 400 V CEO Emitter Base Voltage -V 6 V EBO C

2SA940 Silicon PNP transistor / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1 Base PIN 2 Collector 1 2SC2073 2 3 PIN 3 Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical outpu

MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

2SA940T1TL Silicon PNP Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -

VBZA9435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.026at VGS = - 10 V - 6 100 % Rg Tested RoHS - 30 29 nC COMPLIANT 100 % UIS Tested 0.030 at VGS = - 4.5 V - 5 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6

VBZA9410 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA94 FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 V Collector-Emitter Voltage - CEO Collector-Base Voltage - V -400 V CBO Emitter-Base Voltage V -7 V

MMBTA94 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA940 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

INCHANGE Semiconductor isc Silicon PNP Power Transistor KSA940TU DESCRIPTION Collector-Emitter Breakdown Voltage V(BR)CEO= -150V(Min) DC Current Gain hFE= 40-140@ IC= -0.5A Complement to Type KSC2073TU Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier , vertical output app

isc Silicon PNP Power Transistor 2SA940 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE