A94 Datasheet, Equivalent, Cross Reference Search

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A94 TRANSISTOR (PNP) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC C

A94TRANSISTOR (PNP) FEATURES SOT-89-3L High voltage 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Units3 1. BASE VCBO Collector-Base Voltage -400 V 2. COLLECTOR VCEO Collector-Emitter Voltage -400 V 3. EMITTER VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 APC Collector Power Dissipation 0.5 W Tj Junction

A94(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V Collector Current -Continuous IC -0.2 ACollector Power Dissipation PC 0.625 WJunct

TO-92 Plastic-Encapsulate TransistorsA94 TRANSISTOR (PNP)TO-92FEATURESFEATURESFEATURESFEATURES1.EMITTERHigh voltage2.BASEMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS3.COLLECTOR1 2 3Symbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsVCBO Collector

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A94 TRANSISTOR (PNP) 1.EMITTER 2.BASE FEATURES High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Colle

KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 150 VVCEO Collector-Emitter Voltage - 150 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 1.5 AIB Base Curr

SQJA94EPwww.vishay.comVishay SiliconixAutomotive N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see 1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 80

CMLTA94www.centralsemi.comSURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGEDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CMLTA94 is a PNP high voltage transistor, epoxy molded in a space saving SOT-563 surface mount package and designed for extremely high voltage applications.MARKING CODE: 94CSOT-563 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage V

CMPTA94www.centralsemi.comSURFACE MOUNTHIGH VOLTAGEDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C94SOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 400 VCollector-Emitter Volt

CZTA94www.centralsemi.comSURFACE MOUNTHIGH VOLTAGE DESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZTA94 type is a surface mount epoxy molded PNP silicon planar epi-taxial transistors designed for extremely high voltage applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 400 V

SI I O A A SA HI H O TA T A SISTO ISS A H T i I I TI T I i II i i TO A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I II i V V I I V I i V V I I V I II I V V I II I V V i I V V I II i V V I

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC).DSA9402Silicon PNP epitaxial planar typeFor general amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free package Pin Name 1. Base Packaging 2

UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: V =-400V CEO* Low collector-Emitter saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA94L-AB3-R MPSA94G-AB3-R SOT-89 B C E Tape ReelMPSA94L-T92-B MPSA94G-T92-B TO-92 E B C

UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: V =-400V CEO* Collector Dissipation: P =625mW D(MAX)* Low collector-Emitter saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZTA94L-AA3-R PZTA94G-AA3-R SOT-223

UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3* Collector-Emitter Voltage: V = -400V CEO* Collector Dissipation: P = 350mW C(MAX)* Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2SOT-23* Telephone Switching (JEDEC TO-236)* High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num

BCPA94 -0.5 A, -400 V PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The BCPA94 is designed for application requires high voltage. SOT-89 FEATURES High VoltageVCEO=400V (min) at IC=1mA High Current gainIC=300mA at 25C Complementary with BCPA44 MA

PZTA94PNP Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223DescriptionThe PZTA94 is designed for application requires high voltage.Features *High Current Gain: IC=300mA at 25 oC*High Voltage: VCEO=400V (min) at IC=1mAMillimeterMillimeter*Complementary With PZTA44 REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.

MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor AL 33Top View C BMARKING 11 2Product Marking Code2K EMMBTA44 4DDH JF GSYMBOL Millimeter MillimeterREF. REF. Collector Min. Max. Min.

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSA940, CSC2073CSA940 PNP PLASTIC POWER TRANSISTORCSC2073 NPN PLASTIC POWER TRANSISTORPower Amplifier Applications and Vertical Output ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9452 N-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 38m@10V20V 50m@4.5V4A80m@2.5V1. GATE 2. DRAIN Description 3. SOURCE The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate TransistorsSOT-223 PZTA94 TRANSISTOR (PNP)FEATURES1. BASE High Voltage Driver Applications2. COLLECTORMARKING: 3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate TransistorsMMBTA94 TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitte

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET SOT-89-3L Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low 1. GATE on- resistance and cost-effectiveness. 2. DRAIN 3. SOURCE 1 2 2 3 Maximum ratings (

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SA940 TRANSISTOR (PNP) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide Safe Operating Area. 3. EMITTER Complementary to 2SC2703 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -15

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION With TO-220 package Complement to type 2SC2073 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Col

SEMICONDUCTOR MPSA94TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. B CFEATURES High Breakdown Voltage.Complementary to MPSA44.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25)D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBO -400 VCollector-Base Voltage H 0.45_HJ 14.00 + 0.50K

SEMICONDUCTOR MPSA94ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. B CFEATURES High Breakdown Voltage.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBO -480 VCollector-Base Voltage H 0.45_HJ 14.00 + 0.50K 0.55 MAXVCEO -480 VCollect

MMBTA94TRANSISTOR(PNP)SOT23 FEATURES High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -200 mA CI Collector Current -Pulsed -300 mA C

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA94MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO -400 VCollector-Emitter Voltage -Collec

2SA940(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value UnitsVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Co

WTMA94PNP Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free12*High Voltage 1. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-400VCEOVCollector-Emitter Voltage -400VEBOVEmitter-Base Voltage -5Collector Current - Continuous IC mA-200ICMCollector Current - Pulsed mA-300Collect

MPSA94High-Voltage PNP TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -400 VdcCollector-Base Voltage VCBO -400VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC-200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55 to +150

PZTA94High-Voltage PNP TransistorCOLLECTOR2,44Surface Mount1. BASE 2.COLLECTOR 3.EMITTER 1124.COLLECTORP b Lead(Pb)-Free3BASE3SOT-223EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage VCEO -400 VdcVCBOCollector-Base Voltage -400 VdcEmitter-Base VOltage VEBO -6.0 VdcICmAdcCollector Current-Continuous -300PD WTotal Dev

MMBTA94COLLECTORHigh-Voltage PNP Transistor Surface Mount 3SOT-233P b Lead(Pb)-Free1BASE12 2EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -400 VdcCEOCollector-Base Voltage VCBO -400 VdcEmitter-Base Voltage VEBO -6.0 VdcCollector Current-Continuous ICmAdc-150Thermal CharacteristicsCharacteristics Symbol Max UnitMaximum Power

FM120-M WILLASTHRUMMBTA94LT1PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200VTRANSISTORFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent poweWe declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance.SOD-123Hcompliance with RoHS re

Spec. No. : HN200209HI-SINCERITYIssued Date : 2000.11.01Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA94 is designed for application that requires high voltage.SOT-23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to HMBTA44Absolute Maximum Ratings Maximum Temp

Spec. No. : HE6355HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.03.30MICROELECTRONICS CORP.Page No. : 1/5HMPSA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA94 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400V(Min.) at IC=1mA High Current: IC=300mA at 25C Complementary to HMPSA44Absolute Max

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA94 TRANSISTOR (PNP) FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25) Collector current 1. EMITTER ICM: -0.2 A 2. BASE Collector-base voltage 3. COLLECTOR V(BR)CBO: -400 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150

Spec. No. : C309A3 Issued Date : 2003.06.30 CYStech Electronics Corp.Revised Date : 2011.12.13 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor MPSA94Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.08V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to MPSA44. Pb-f

Spec. No. : C309N3-H Issued Date : 2003.06.30 CYStech Electronics Corp.Revised Date : 2011.02.17 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400VIC -0.15AVCESAT(max) -0.3VBTPA94N3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation a

Spec. No. : C309A3 Issued Date : 2003.06.30 CYStech Electronics Corp. Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTNA44A3. Symbol Outline

MPSA94 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Collector P

MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base

MPSA94 PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 400 V Collector Emitter Voltage -VCEO 400 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 300 mA Power Dissipation

LESHAN RADIO COMPANY, LTD.LMBTA94LT1GLMBTA94LT1GS-LMBTA94LT1GPNP EPITAXIAL PLANAR TRANSISTORWe declare that the material of product3compliance with RoHS requirements.Description1The LMBTA94LT1G is designed for application 2that requires high voltage.SOT 23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to LMBTA94LT1GCOLLECTOR

A940PNP silicon APPLICATIONLow Noise Audio Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage -150 VVCBOCollector-emitter voltage -150 VVCEOTO-2201Emitter-base voltage -5 VVEBO1.Base 2.Collector 3.EmitterCollector current -1.5 AICBase current -0.5 AIBC

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA940 APPLICATIONS Vertical Deflection Output Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA94 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation625mW

2SA940A(3CA940A) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073A(3DA2073A) Features: Complementary to 2SC2073A(3DA2073A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -1

SEMICONDUCTORMMBTA94TECHNICAL DATAPNP EPITAXIAL PLANAR TRANSISTOR3We declare that the material of product2compliance with RoHS requirements.1DescriptionSOT23The MMBTA94 is designed for application that requires high voltage.COLLECTORFeatures3 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA 1BASEDEVICE MARKING2MMBTA94LT1G = 4ZEMITTERAbsolute

SMD Type MOSFETP-Channel MOSFET A9451 Features VDS (V) =-20V1.70 0.1 ID =-2.3A (VGS =12V) RDS(ON) 0.135 (VGS =-4.5V) RDS(ON) 0.240 (VGS =-2.5V) Marking: A94510.42 0.10.46 0.11.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -20V Gate-Source Voltage VGS 12

SMD Type TransistorsPNP TransistorsMMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA4412 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40

SMD Type MOSFETN-Channel MOSFET A9452 Features VDS (V) = 20V1.70 0.1 ID = 4 A (VGS = 12V) RDS(ON) 0.038 (VGS = 10V) RDS(ON) 0.05 (VGS = 4.5V) RDS(ON) 0.08 (VGS = 2.5V) Marking:A94520.42 0.10.46 0.1DG1.Gate2.DrainS3.Source Absolute Maximum Ratings Ta = 25ParameterSymbol Rating Unit Drain-Source Volt

PJA94N0330V N-CHANNEL ENHANCEMENT MODE MOSFET30 Volts 2.9 AmperesVOLTAGE CURRENTFEATURES RDS(ON), VGS@10V,ID@3.1A

TRANSISTOR A940C MAIN CHARACTERISTICS FEATURES IC -1.5A Epitaxial silicon VCEO -150V High switching speed PC 25W RoHS RoHS product C2073 Complementary to C2073 APPLICATIONS High frequency switch power supply Commonly power amplifier

2SB941(3CA941) PNP /SILICON PNP TRANSISTOR :./Purpose: For low-frequency power amplification.: HFE - TO-220 /Feature: High forward current transfer ratio Hfe which has satisfactory linearity,low collector to emi

2SA940(3CA940) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073(3DA2073) Features: Complementary to 2SC2073(3DA2073). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -150 V

MMBTA94TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -Continuous -200 mA CI Collector Current -Pulsed

Silicon FS Trench IGBT CRG15T60A94SCRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage

2SA940PNP / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1Base PIN 2Collector 1 2SC2073 2 3 PIN 3Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical ou

www.msksemi.comMMBTA94-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES High Breakdown Voltage1. BASEMARKING:4D2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBOV Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Co

MMBTA94PNP TransistorFeaturesSOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (Ta=25)Parameter Symbol Value UnitsCollector Base Voltage -V 400 VCBOCollector Emitter Voltage -V 400 VCEOEmitter Base Voltage -V 6 VEBOC

2SA940Silicon PNP transistor / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1Base PIN 2Collector 1 2SC2073 2 3PIN 3Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical outpu

MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

2SA940T1TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

VBZA9435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.026at VGS = - 10 V - 6 100 % Rg TestedRoHS- 30 29 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V - 5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6

VBZA9410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA94FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 VCollector-Emitter Voltage - CEOCollector-Base Voltage - V -400 VCBOEmitter-Base Voltage V -7 V

MMBTA94BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon PNP Power Transistor KSA940TUDESCRIPTIONCollector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min)DC Current Gain: hFE= 40-140@ IC= -0.5AComplement to Type KSC2073TUMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier ,vertical output app

isc Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE