B772 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 2.7 0.2 7.6 0.2 * Low speed switching 1.3 0.2 4.0 0.1 10.8 0.2 O3.1 0.1 o 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted 2.2 0.1 Symbol Parameter Value Units 1.27 0.1 VCBO Collector-Base Voltag

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-126 FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE Equivalent Circuit B772=Device code Solid dot = Green molding compound device, if none, the normal device B772 XX XX=Code ORDERING INFORMATION Part Number Package Packing Method

B772 TRANSISTOR (PNP) SOT-89 FEATURES 1 2 3 Low speed switching 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W

Guilin Strong Micro -Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro -Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. GMB772 SOT-89 (SOT-89 transistors) (Ta=25 ) (Ta=25 ) (Ta=25 ) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit

B772 Transistor(PNP) 1. BASE TO-252-2L 2. COLLECTOR 3. EMITTER Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Pow

B772(PNP) TO-251 Transistor 1. EMITTER TO-251 2. COLLECTOR 3 BASE 1 2 3 Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collec

B772 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLETOR 1 4.6 B 2 4.4 1.6 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low speed switching 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage

B772 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLETOR 1 4.6 B 2 4.4 1.6 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low speed switching 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Volta

FM120-M WILLAS THRU B772 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR (PNP) FEATURES 1. EMITTER Low speed switching 2. COLLECTOR 3 BASE 1 2 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

Shenzhen Tuofeng Semiconductor Technology Co., Ltd B772 SOT-89 SOT-89 1 2 3 1. BASE 1 2. COLLETOR 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation

ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsula

ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsula

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-126 TO-126 TO-126 TO-126 FEATURES Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units Symbol Parameter Valu

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com B772 TRANSISTOR PNP SOT-89 1 2 3 FEATURES 1. BASE Low speed switching 1 MARKING B772 2. COLLETOR 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter V

Product specification PNP Silicon Epitaxial Planar Transistor B772 FEATURES Pb Low speed switching. Lead-free Low saturation voltage. Excellent h linearity and high h . FE FE Complementary D882. APPLICATIONS Audio frequency power amplifier. SOT-89 ORDERING INFORMATION Type No. Marking Package Code B772 B772 SOT-89 none is for Lead Fr

B772 PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING B772 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current A 3 -ICP Peak Coll

B772 B772 TRANSISTOR PNP SOT-89-3L 1 2 3 FEATURE Low speed switching 1. BASE MARKING B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 3. EMITTER VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5

B772 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to D882 Low Speed Switching Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V

PNP B772 PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V

2SB772 PNP medium power transistor Features High current Low saturation voltage Complement to 2SD882 Applications 1 2 Voltage regulation 3 Relay driver SOT-32 (TO-126) Generic switch Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a PNP transistor manufactured by using planar Technology re

KSB772 Audio Frequency Power Amplifier Low Speed Switching Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

B772-R MCC Micro Commercial Components TM B772-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 B772-Y Phone (818) 701-4933 B772-GR Fax (818) 701-4939 Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0A Plastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range -55O

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

B772-R MCC Micro Commercial Components TM B772-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 B772-Y Phone (818) 701-4933 B772-GR Fax (818) 701-4939 Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0A Plastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range -55O

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pi

UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number

UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772L is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882L TO-92L 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C

B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. B Min. Max. A 4.40 4.7

B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-126C FEATURES Low frequency power amplifier Emitter High Current Collector Low Speed Switching Base CLASSIFICATION OF hFE Product-Rank B772C-R B772C-O B772C-Y B772C-GR Range 60 120 100 200 160

TSB772 Low Vcesat PNP Transistor TO-126 Pin Definition PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882 TSB772CK B0 TO-126 250pcs / Bulk Structure TSB7

TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB772 TO126 Plastic Package E C B Complementary CSD882 Audio Frequency Power Amplifier and Low Speed Switching ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >40 V Collector

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TRANSISTOR (PNP) TO-92 FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE Equivalent Circuit B772 B772 Z Z=Rank of hFE 1 ORDERING INFORMATION Part Numb

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L B772M TRANSISTOR (PNP) FEATURES 1. BASE Low Speed Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

SEMICONDUCTOR KTB772 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTD882. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO -40 V Collector-Base Voltage _ + F 11.0 0.3 G 2.9 MAX VCEO -30 V

B772S Transistor(PNP) TO-92 1. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -3 A PC Collector Power Dis

2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc

Spec. No. HE6605 HI-SINCERITY Issued Date 1993.05.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/5 HSB772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperat

Spec. No. HE6549 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.08.13 MICROELECTRONICS CORP. Page No. 1/5 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature..................

Spec. No. C817A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77

Spec. No. C809J3 Issued Date 2008.06.12 CYStech Electronics Corp. Revised Date 2010.12.08 Page 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3A RCE(SAT) 225m typ. Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA

Spec. No. C809T3 Issued Date 2008.08.01 CYStech Electronics Corp. Revised Date Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 B Base C Collector E Emitter E C B Absolute

Spec. No. C817M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an

Spec. No. C817I3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2011.08.30 Page 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -3A BTB772I3 RCESAT(TYP) 150m Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics High temperature soldering guaranteed 265 C/5s, 0.25 (6.3

Spec. No. C817T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.02.17 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3 Pb-free lead plating and halogen-free package Symbol Outline

2SB772T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features V , ,h CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. / Applications 3 , ,

2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications , ,

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V -IC Collector Current 3 A O Total Power Dissipati

2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Current

ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current

ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Curre

LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB772Q L2SB772P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB772Q 72Q 2500/Tape&Reel 2,4 L2SB772P 72P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation

R B772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 FEATURES 2

R B772P www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 FEATURES 2

R B772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 2 FEATURES 2

SEMICONDUCTOR FTB772 TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING D E A FEATURES Complementary to FTD882. C F G DIM MILLIMETERS B A 8.3 MAX MAXIMUM RATING (Ta=25 ) B 11.3 0.3 C 4.15 TYP 1 2 3 D 3.2 0.2 CHARACTERISTIC SYMBOL RATING UNIT E 2.0 0.2 H F 2.8 0.1 I VCBO -40 V Collector-Base Voltage G 3.2 0.1 H 1.27 0.1 K VCEO -30 V Collector

SEMICONDUCTOR FTB772F TECHNICAL DATA A FTB772F PNP TRANSISTOR C H G FEATURES Low Speed Switching D D K F F DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 TYP 1. BASE H 1.8 MAX 2. COLLECTOR VCBO Collector-Base Voltage -40

SEMICONDUCTOR FTB772D TECHNICAL DATA FTB772D TRANSISTOR A I FEATURES C J Low Speed Switching DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 0 2 L F F VCBO Collector-Base Voltage -40 V J 0 5 0 1 L 0 50 0 10 1 2 3

DIP Type Transistors PNP Tr ansistors 2SB772 TO-126 Unit mm 8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage 3.20 0.10 Complement to 2SD882 (1.00) (0.50) 0.75 0.10 1.75 0.20 1.60 0.10 0.75 0.10 1 2 3 #1 +0.10 2.28TYP 2.28TYP 0.50 0.05 [2.28 0.20] [2.28 0.20] 1. Base 2. Collector 3. Emitte

SMD Type Transistors PNP Tr ansistors 2SB772A Features 1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -70 V Collector to Emitter Voltage VCEO -60 V Emitter to Base V

SMD Type Transistors T PNP Transistor 2SB772 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 PNP transistor High current output up to 3A +0.2 +0.8 5.30-0.2 0.50-0.7 Low Saturation Voltage 4 Complement to 2SD882 0.127 +0.1 max 0.80-0.1 2 3 1 +0.1 2.3 0.60-0.1 1. BASE +0.15 4.60-0.15 2. COLLECTOR 3. EMITTER 4. COLLECTOR Absolute Maximum Rati

CHENMKO ENTERPRISE CO.,LTD 2SB772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX.

CHENMKO ENTERPRISE CO.,LTD 2SB772ZGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.5

2SB772T(3CA772T) PNP /SILICON PNP TRANSISTOR 3 , , /Purpose Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. V , ,h /Features Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE

2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR 3 , , /Purpose Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. V , ,h /Features Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE

2SB772D(3CA772D) PNP /SILICON PNP TRANSISTOR 3 , , Purpose Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. , h ./Features Low saturation voltage, excellent h linearity FE FE and high h . FE

2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR , , Purpose Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. , h /Features Low saturation voltage, excellent h linearity FE FE and high h . FE /Absolut

PMB772 PNP SILICON POWER TRANSISTOR designed for output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -30 V Emitter Base Voltage VEBO -5 V Collector Current (DC) IC(DC) -3 A Collector Current (Pulse) IC(Pulse)

B772 TRANSISTOR PNP FEATURES Low speed switching SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 3. EMITTER VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Tj Junction Tempera

SUNROC ALJB772 TRANSISTOR(PNP) FEATURES 1. EMITTER Power dissipation PCM 1W(Tamb=25 ) 2. COLLECTOR Collector current ICM -1.5A 3. BASE Collector-base voltage V(BR)CBO -40V 1 2 3 Opcrating and storage junction temperature range TJ,Tstg -65 to -150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specjfied) MIN TYP MAX UNIT Parameter Symbol Test conditions Collec

www.msksemi.com 2SB772-MS Semiconductor Compiance Semiconductor Compiance 1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A

www.msksemi.com 2SB772 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Low Speed Switching 2 1 3 TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 1. BASE VEBO Emitter-Base Voltage -6 V 2. COLLECTOR IC Collector Current -Continuous -3

DATA SHEET B772 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -30 Volts CURRENT -3.0 Ampere FEATURES COLLECTOR-EMITTER VOLTAGE VCE = -30V COLLECTOR CURRENT IC = -3A PNP EXITAXIAL SILICON,PLANAR DESIGN LEAD FREE AND HALOGEN FREE MECHANICAL DATA CASE SOT-89,PLASTIC TERMINALS SOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT 0.002 GRAMS CASE SOT-89 M

2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbo

B772 PNP Transistors Features 3 PNP transistor High current output up to 3A 2 Low Saturation Voltage 1.Base 1 Complement to 2SD882 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V

SOT-89-3L Plastic-Encapsulate PNP Transistors Encapsulate FEATURE Low speed switching MARKING B772 MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted) ELECTRICAL CHARACTERISTICS (T ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) 1 of 2 2 of 2

B772 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR PNP SOT-89-3L FEATURE Low speed switching 1. BASE MARKING B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 3. EMITTER VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC C

B772 TRANSISTOR PNP SOT-89 FEATURE Low speed switching 1. BASE MARKING B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 3. EMITTER VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Thermal Res

D882 AO3400 SI2305 B772 PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Pea

2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING B772 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak C

2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol

isc Silicon PNP Power Transistor 2SB772 DESCRIPTION High Collector Current -I = -3A C High Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD882 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in the output stage of 3 watts a