All Transistors. B772 Datasheet

 

B772 Datasheet, Equivalent, Cross Reference Search


   Type Designator: B772
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT89

 B772 Transistor Equivalent Substitute - Cross-Reference Search

   

B772 Datasheet (PDF)

 ..1. Size:380K  secos
b772.pdf

B772
B772

B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126Features2.70.27.60.2* Low speed switching1.30.24.00.110.80.2O3.1 0.1o 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted 2.20.1Symbol Parameter Value Units1.270.1VCBO Collector-Base Voltag

 ..2. Size:440K  jiangsu
b772.pdf

B772
B772

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsB772 TRANSISTOR (PNP)TO-126 FEATURES1. EMITTERLow Speed Switching2. COLLECTOR3 BASE Equivalent Circuit B772=Device code Solid dot = Green molding compound device, if none, the normal device B772 XXXX=Code ORDERING INFORMATION Part Number Package Packing Method

 ..3. Size:477K  htsemi
b772.pdf

B772
B772

B772TRANSISTOR (PNP) SOT-89 FEATURES 1 2 3 Low speed switching 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W

 ..4. Size:245K  gsme
b772.pdf

B772
B772

Guilin Strong Micro -Electronics Co., Ltd.Guilin Strong Micro-Electronics Co., Ltd.Guilin Strong Micro -Electronics Co., Ltd.Guilin Strong Micro-Electronics Co., Ltd.GMB772SOT-89 (SOT-89 transistors)(Ta=25 )(Ta=25 )(Ta=25 )(Ta=25)CHARACTERISTIC Symbol Rating Unit

 ..5. Size:182K  lge
b772 to-252-2l.pdf

B772
B772

B772 Transistor(PNP)1. BASE TO-252-2L2. COLLECTOR 3. EMITTER FeaturesLow speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Pow

 ..6. Size:185K  lge
b772 to-251.pdf

B772
B772

B772(PNP) TO-251 Transistor1. EMITTER TO-2512. COLLECTOR 3 BASE 1 2 3 Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collec

 ..7. Size:794K  lge
b772.pdf

B772
B772

B772 SOT-89 Transistor(PNP)1. BASESOT-892. COLLETOR1 4.6B2 4.41.61.83. EMITTER1.41.43 2.64.252.43.75Features 0.8MIN0.53 Low speed switching 0.400.480.442x)0.13 B0.35 0.371.53.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage

 ..8. Size:275K  lge
b772 sot-89.pdf

B772
B772

B772 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLETOR 1 4.6B2 4.41.61.83. EMITTER 1.41.43 2.64.252.43.75Features 0.8MIN0.53 Low speed switching 0.400.480.442x)0.13 B0.35 0.371.53.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Volta

 ..9. Size:348K  willas
b772.pdf

B772
B772

FM120-MWILLASTHRUB772 SOT-89 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimiz

 ..10. Size:2735K  shenzhen
b772.pdf

B772
B772

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR (PNP) FEATURES 1. EMITTER Low speed switching 2. COLLECTOR 3 BASE 1 2 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

 ..11. Size:389K  shenzhen
b772 sot89.pdf

B772
B772

Shenzhen Tuofeng Semiconductor Technology Co., Ltd B772 SOT-89 SOT-89 1 2 3 1. BASE 1 2. COLLETOR 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation

 ..12. Size:390K  can-sheng
b772 to-126.pdf

B772
B772

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

 ..13. Size:304K  can-sheng
b772 to-252.pdf

B772
B772

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsula

 ..14. Size:304K  can-sheng
b772 to-251.pdf

B772
B772

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsula

 ..15. Size:209K  can-sheng
b772.pdf

B772
B772

TO-126 Plastic-Encapsulate TransistorsB772 TRANSISTOR (PNP)TO-126TO-126TO-126TO-126FEATURESLow speed switchingMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)2. COLLECTORSymbol Parameter Value UnitsSymbol Parameter Valu

 ..16. Size:331K  can-sheng
b772 sot-89.pdf

B772
B772

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com B772 TRANSISTORPNP SOT-89 1 2 3 FEATURES1. BASE Low speed switching 1 MARKING: B7722. COLLETOR 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter V

 ..17. Size:325K  galaxy
b772.pdf

B772
B772

Product specification PNP Silicon Epitaxial Planar Transistor B772 FEATURES Pb Low speed switching. Lead-free Low saturation voltage. Excellent h linearity and high h . FE FE Complementary: D882. APPLICATIONS Audio frequency power amplifier. SOT-89 ORDERING INFORMATION Type No. Marking Package Code B772 B772 SOT-89 : none is for Lead Fr

 ..18. Size:467K  fuxinsemi
b772.pdf

B772
B772

 ..19. Size:2057K  mdd
b772.pdf

B772
B772

B772PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING:B772 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current A3-ICPPeak Coll

 ..20. Size:1173K  cn dowo
b772.pdf

B772
B772

B772 B772 TRANSISTORPNPSOT-89-3L 1 2 3 FEATURELow speed switching 1. BASEMARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 3. EMITTERVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5

 ..21. Size:794K  cn hottech
b772.pdf

B772
B772

B772BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to D882 Low Speed Switching Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V

 ..22. Size:341K  cn idchip
b772.pdf

B772
B772

PNP B772PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V

 0.1. Size:110K  st
2sb772.pdf

B772
B772

2SB772PNP medium power transistorFeatures High current Low saturation voltage Complement to 2SD882Applications12 Voltage regulation3 Relay driver SOT-32(TO-126) Generic switch Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a PNP transistor manufactured by using planar Technology re

 0.2. Size:76K  fairchild semi
ksb772.pdf

B772
B772

KSB772Audio Frequency Power Amplifier Low Speed Switching Complement to KSD882TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 VVEBO Emitter-Base Voltage - 5 VIC Collector Current (DC) - 3

 0.3. Size:162K  nec
2sb772.pdf

B772
B772

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2sb772-r.pdf

B772
B772

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 0.5. Size:287K  mcc
2sb772-y.pdf

B772
B772

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 0.6. Size:245K  mcc
b772-gr b772-o.pdf

B772
B772

B772-RMCCMicro Commercial ComponentsTMB772-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 B772-YPhone: (818) 701-4933B772-GRFax: (818) 701-4939Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55O

 0.7. Size:287K  mcc
2sb772-gr.pdf

B772
B772

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 0.8. Size:245K  mcc
b772-r b772-y.pdf

B772
B772

B772-RMCCMicro Commercial ComponentsTMB772-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 B772-YPhone: (818) 701-4933B772-GRFax: (818) 701-4939Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55O

 0.9. Size:287K  mcc
2sb772-o.pdf

B772
B772

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 0.10. Size:225K  onsemi
ksb772.pdf

B772
B772

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.11. Size:257K  utc
2sb772s.pdf

B772
B772

UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 DESCRIPTION SOT-223 SOT-89The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A 1* Low saturation voltage * Complement to 2SD882S TO-92

 0.12. Size:233K  utc
b772ss.pdf

B772
B772

UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pi

 0.13. Size:170K  utc
2sb772.pdf

B772
B772

UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number

 0.14. Size:24K  utc
2sb772l.pdf

B772
B772

UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORDESCRIPTIONThe UTC 2SB772L is a medium power low voltagetransistor, designed for audio power amplifier, DC-DCconverter and voltage regulator.FEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SD882LTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C

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b772s.pdf

B772
B772

B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. BMin. Max. A 4.40 4.7

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b772c.pdf

B772
B772

B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-126CFEATURES Low frequency power amplifier Emitter High Current Collector Low Speed Switching Base CLASSIFICATION OF hFE Product-Rank B772C-R B772C-O B772C-Y B772C-GRRange 60~120 100~200 160

 0.17. Size:89K  taiwansemi
tsb772ck.pdf

B772
B772

TSB772 Low Vcesat PNP Transistor TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882 TSB772CK B0 TO-126 250pcs / Bulk Structure TSB7

 0.18. Size:78K  taiwansemi
tsb772sct.pdf

B772
B772

TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T

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csb772 p q.pdf

B772
B772

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP PLASTIC POWER TRANSISTORCSB772TO126 Plastic PackageECBComplementary CSD882Audio Frequency Power Amplifier and Low Speed SwitchingABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >40 VCollector

 0.20. Size:174K  fci
2sb772-s.pdf

B772
B772

 0.21. Size:966K  jiangsu
b772s.pdf

B772
B772

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TRANSISTOR (PNP) TO-92FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE Equivalent Circuit B772 B772 Z Z=Rank of hFE 1ORDERING INFORMATION Part Numb

 0.22. Size:1986K  jiangsu
b772m.pdf

B772
B772

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L B772M TRANSISTOR (PNP) FEATURES 1. BASE Low Speed Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

 0.23. Size:220K  jmnic
2sb772.pdf

B772
B772

JMnic Product Specification Silicon PNP Power Transistors 2SB772 DESCRIPTION With TO-126 package Complement to type 2SD882 APPLICATIONS Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DC- DC converter and relay driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25

 0.24. Size:396K  kec
ktb772.pdf

B772
B772

SEMICONDUCTOR KTB772TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTD882.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -40 VCollector-Base Voltage_+F 11.0 0.3G 2.9 MAXVCEO -30 V

 0.25. Size:195K  lge
b772s.pdf

B772
B772

B772S Transistor(PNP)TO-921. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters)IC Collector Current -Continuous -3 A PC Collector Power Dis

 0.26. Size:687K  wietron
2sb772 2sd882.pdf

B772
B772

2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc

 0.27. Size:51K  hsmc
hsb772.pdf

B772
B772

Spec. No. : HE6605HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/5HSB772PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772 is designed for using in output stage of 1w audio amplifier, voltageregulator, DC-DC converter and relay driver.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperat

 0.28. Size:59K  hsmc
hsb772s.pdf

B772
B772

Spec. No. : HE6549HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5HSB772SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772S is designed for using in output stage of 0.75W amplifier, voltageregulator, DC-DC converter and driver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature..................

 0.29. Size:352K  cystek
btb772sa3.pdf

B772
B772

Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77

 0.30. Size:272K  cystek
btb772j3.pdf

B772
B772

Spec. No. : C809J3 Issued Date : 2008.06.12 CYStech Electronics Corp. Revised Date: 2010.12.08 Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3ARCE(SAT) 225m typ.Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA

 0.31. Size:221K  cystek
btb772st3.pdf

B772
B772

Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute

 0.32. Size:247K  cystek
btb772am3.pdf

B772
B772

Spec. No. : C817M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date:2013.08.12 Page:1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an

 0.33. Size:248K  cystek
btb772i3.pdf

B772
B772

Spec. No. : C817I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date: 2011.08.30 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -3ABTB772I3 RCESAT(TYP) 150m Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics High temperature soldering guaranteed : 265C/5s, 0.25(6.3

 0.34. Size:229K  cystek
btb772t3.pdf

B772
B772

Spec. No. : C817T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3 Pb-free lead plating and halogen-free package Symbol Outline

 0.35. Size:297K  cystek
btb772aj3.pdf

B772
B772

Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2013.02.19 Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252AA BTB772AJ3BBase C

 0.36. Size:943K  blue-rocket-elect
2sb772d.pdf

B772
B772

2SB772D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

 0.37. Size:979K  blue-rocket-elect
2sb772s.pdf

B772
B772

2SB772S Rev.A May.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features VCE(sat),,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

 0.38. Size:1586K  blue-rocket-elect
2sb772t.pdf

B772
B772

2SB772T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features V ,,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

 0.39. Size:668K  blue-rocket-elect
2sb772n.pdf

B772
B772

2SB772N(BR3CA772N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 PNP Silicon PNP transistor in a SOT-223 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

 0.40. Size:1585K  blue-rocket-elect
2sb772.pdf

B772
B772

2SB772 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

 0.41. Size:468K  blue-rocket-elect
2sb772l.pdf

B772
B772

2SB772L(BR3CA772L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features , h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

 0.42. Size:315K  blue-rocket-elect
2sb772b.pdf

B772
B772

2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

 0.43. Size:341K  blue-rocket-elect
2sb772m.pdf

B772
B772

2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications ,,

 0.44. Size:709K  semtech
st2sb772r.pdf

B772
B772

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati

 0.45. Size:178K  semtech
2sb772u-r 2sb772u-q 2sb772u-p 2sb772u-e.pdf

B772
B772

2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Current

 0.46. Size:668K  semtech
st2sb772t.pdf

B772
B772

ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current

 0.47. Size:431K  semtech
st2sb772u.pdf

B772
B772

ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Curre

 0.48. Size:131K  lrc
l2sb772q.pdf

B772
B772

LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB772Q L2SB772PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB772Q 72Q 2500/Tape&Reel2,4L2SB772P 72P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas

 0.49. Size:27K  shantou-huashan
hb772s.pdf

B772

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

 0.50. Size:114K  jdsemi
b772pc 2.pdf

B772
B772

RB772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

 0.51. Size:116K  jdsemi
b772p.pdf

B772
B772

RB772P www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

 0.52. Size:114K  jdsemi
b772pc.pdf

B772
B772

RB772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 2222FEATURES 2

 0.53. Size:112K  first silicon
ftb772.pdf

B772
B772

SEMICONDUCTORFTB772TECHNICAL DATAAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGDEAFEATURESComplementary to FTD882. CF GDIM MILLIMETERSBA 8.3 MAXMAXIMUM RATING (Ta=25 )B 11.30.3C 4.15 TYP1 2 3D 3.20.2CHARACTERISTIC SYMBOL RATING UNITE 2.00.2H F 2.80.1IVCBO -40 VCollector-Base VoltageG 3.20.1H 1.270.1KVCEO -30 VCollector

 0.54. Size:243K  first silicon
ftb772f.pdf

B772
B772

SEMICONDUCTORFTB772FTECHNICAL DATA AFTB772F PNP TRANSISTORCHG FEATURES Low Speed SwitchingDDKF FDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20 MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 TYP1. BASEH 1.8 MAX2. COLLECTORVCBO Collector-Base Voltage -40

 0.55. Size:245K  first silicon
ftb772d.pdf

B772
B772

SEMICONDUCTORFTB772DTECHNICAL DATAFTB772D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage -40 V J 0 5 0 1L 0 50 0 101 2 3

 0.56. Size:891K  kexin
2sb772-126.pdf

B772
B772

DIP Type TransistorsPNP Transistors2SB772TO-126Unit:mm8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage3.20 0.10 Complement to 2SD882(1.00) (0.50)0.75 0.101.75 0.201.60 0.100.75 0.101 2 3#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitte

 0.57. Size:344K  kexin
2sb772a.pdf

B772

SMD Type TransistorsPNP Transistors2SB772A Features1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -70 VCollector to Emitter Voltage VCEO -60 VEmitter to Base V

 0.58. Size:369K  kexin
2sb772.pdf

B772
B772

SMD Type TransistorsTPNP Transistor2SB772TO-252Unit: mm Features+0.15 +0.16.50-0.15 2.30-0.1 PNP transistor High current output up to 3A+0.2 +0.85.30-0.2 0.50-0.7 Low Saturation Voltage4 Complement to 2SD8820.127+0.1 max0.80-0.1231+0.12.3 0.60-0.11. BASE+0.154.60-0.152. COLLECTOR3. EMITTER4. COLLECTOR Absolute Maximum Rati

 0.59. Size:110K  chenmko
2sb772gp.pdf

B772
B772

CHENMKO ENTERPRISE CO.,LTD2SB772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.

 0.60. Size:124K  chenmko
2sb772zgp.pdf

B772
B772

CHENMKO ENTERPRISE CO.,LTD2SB772ZGPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate).6.5

 0.61. Size:348K  lzg
2sb772t 3ca772t.pdf

B772
B772

2SB772T(3CA772T) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

 0.62. Size:288K  lzg
2sb772i 3ca772i.pdf

B772
B772

2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE

 0.63. Size:280K  lzg
2sb772l 3ca772l.pdf

B772
B772

2SB772L(3CA772L) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

 0.64. Size:256K  lzg
2sb772s 3ca772s.pdf

B772
B772

2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

 0.65. Size:413K  lzg
2sb772d 3ca772d.pdf

B772
B772

2SB772D(3CA772D) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h ./Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

 0.66. Size:220K  lzg
2sb772m 3ca772m.pdf

B772
B772

2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR :,, Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE/Absolut

 0.67. Size:327K  lzg
2sb772b 3ca772b.pdf

B772
B772

2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

 0.68. Size:288K  lzg
2sb772i.pdf

B772
B772

2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE

 0.69. Size:190K  pmc components
pmb772.pdf

B772

PMB772 PNP SILICON POWER TRANSISTOR designed for output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -40 VCollector Emitter Voltage VCEO -30 VEmitter Base Voltage VEBO -5 VCollector Current (DC) IC(DC) -3 ACollector Current (Pulse) IC(Pulse)

 0.70. Size:1219K  slkor
b772r b772o b772y b772gr.pdf

B772
B772

B772 TRANSISTOR PNPFEATURES Low speed switching SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASESymbol Parameter Value Units2. COLLECTORVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 3. EMITTERVEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Tj Junction Tempera

 0.71. Size:80K  sunroc
aljb772.pdf

B772

SUNROCALJB772 TRANSISTOR(PNP)FEATURES1. EMITTERPower dissipationPCM:1W(Tamb=25)2. COLLECTORCollector currentICM:-1.5A3. BASECollector-base voltageV(BR)CBO: -40V1 2 3Opcrating and storage junction temperature rangeTJ,Tstg:-65 to -150ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specjfied):MIN TYP MAX UNITParameter Symbol Test conditionsCollec

 0.72. Size:5206K  msksemi
2sb772-ms.pdf

B772
B772

www.msksemi.com2SB772-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A

 0.73. Size:4731K  msksemi
2sb772.pdf

B772
B772

www.msksemi.com2SB772Semiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP) FEATURES Low Speed Switching213TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 1. BASEVEBO Emitter-Base Voltage -6 V 2. COLLECTOR IC Collector Current -Continuous -3

 0.74. Size:217K  powersilicon
b772-r b772-o b772-y b772-gr.pdf

B772
B772

DATA SHEET B772 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -30 Volts CURRENT -3.0 Ampere FEATURES COLLECTOR-EMITTER VOLTAGE VCE = -30V COLLECTOR CURRENT IC = -3A PNP EXITAXIAL SILICON,PLANAR DESIGN LEAD FREE AND HALOGEN FREE MECHANICAL DATA CASESOT-89,PLASTIC TERMINALSSOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT:0.002 GRAMS CASESOT-89 M

 0.75. Size:242K  pjsemi
2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf

B772
B772

2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequency power amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbo

 0.76. Size:208K  cn shikues
b772r b772o b772y b772gr.pdf

B772
B772

SOT-89-3L Plastic-Encapsulate PNP Transistors EncapsulateFEATURE Low speed switching MARKING:B772 MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted)ELECTRICAL CHARACTERISTICS (TELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) 1 of 2 2 of 2

 0.77. Size:725K  wpmtek
b772r b772o b772y b772gr.pdf

B772
B772

B772 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTORPNPSOT-89-3L FEATURE Low speed switching 1. BASEMARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit3. EMITTERVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC C

 0.78. Size:1155K  cn yongyutai
b772r b772o b772y b772gr.pdf

B772
B772

B772 TRANSISTORPNPSOT-89FEATURE Low speed switching 1. BASEMARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit3. EMITTERVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Thermal Res

 0.79. Size:646K  cn zre
b772r b772o b772y b772gr.pdf

B772
B772

B772 TRANSISTOR(PNP)SOT-89-3L SOT-89-3LSOT-89-3LPlastic-Encapsulate Transistors Features Low speed switching Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L Outline Plastic Package Epoxy UL: 94V-0Marking: B772 Mounting Position: Any(TA = 25

 0.80. Size:751K  cn twgmc
b772r b772q b772p b772e.pdf

B772
B772

D882AO3400SI2305B772PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPea

 0.81. Size:414K  cn cbi
2sb772u.pdf

B772
B772

2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING:B772 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak C

 0.82. Size:801K  cn juxing
2sb772sq.pdf

B772
B772

2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequencypower amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbol

 0.83. Size:213K  inchange semiconductor
2sb772.pdf

B772
B772

isc Silicon PNP Power Transistor 2SB772DESCRIPTIONHigh Collector Current -I = -3ACHigh Collector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD882Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in the output stage of 3 watts a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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