All Transistors. B772 Datasheet

 

B772 Datasheet, Equivalent, Cross Reference Search

Type Designator: B772

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

B772 Transistor Equivalent Substitute - Cross-Reference Search

 

B772 Datasheet (PDF)

..1. b772.pdf Size:380K _secos

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B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126Features2.70.27.60.2* Low speed switching1.30.24.00.110.80.2O3.1 0.1o 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted 2.20.1Symbol Parameter Value Units1.270.1VCBO Collector-Base Voltag

..2. b772.pdf Size:477K _htsemi

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B772TRANSISTOR (PNP) SOT-89 FEATURES 1 2 3 Low speed switching 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W

..3. b772.pdf Size:245K _gsme

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Guilin Strong Micro -Electronics Co., Ltd.Guilin Strong Micro-Electronics Co., Ltd.Guilin Strong Micro -Electronics Co., Ltd.Guilin Strong Micro-Electronics Co., Ltd.GMB772SOT-89 (SOT-89 transistors)(Ta=25 )(Ta=25 )(Ta=25 )(Ta=25)CHARACTERISTIC Symbol Rating Unit

..4. b772 to-251.pdf Size:185K _lge

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B772(PNP) TO-251 Transistor1. EMITTER TO-2512. COLLECTOR 3 BASE 1 2 3 Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collec

..5. b772 sot-89.pdf Size:275K _lge

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B772 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLETOR 1 4.6B2 4.41.61.83. EMITTER 1.41.43 2.64.252.43.75Features 0.8MIN0.53 Low speed switching 0.400.480.442x)0.13 B0.35 0.371.53.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Volta

..6. b772 to-252-2l.pdf Size:182K _lge

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B772 Transistor(PNP)1. BASE TO-252-2L2. COLLECTOR 3. EMITTER FeaturesLow speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Pow

..7. b772.pdf Size:348K _willas

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FM120-MWILLASTHRUB772 SOT-89 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimiz

..8. b772.pdf Size:2735K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR (PNP) FEATURES 1. EMITTER Low speed switching 2. COLLECTOR 3 BASE 1 2 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

..9. b772 sot89.pdf Size:389K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd B772 SOT-89 SOT-89 1 2 3 1. BASE 1 2. COLLETOR 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation

..10. b772.pdf Size:209K _can-sheng

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TO-126 Plastic-Encapsulate TransistorsB772 TRANSISTOR (PNP)TO-126TO-126TO-126TO-126FEATURESLow speed switchingMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)2. COLLECTORSymbol Parameter Value UnitsSymbol Parameter Valu

..11. b772 to-251.pdf Size:304K _can-sheng

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ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsula

..12. b772 to-252.pdf Size:304K _can-sheng

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ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsula

..13. b772 sot-89.pdf Size:331K _can-sheng

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com B772 TRANSISTORPNP SOT-89 1 2 3 FEATURES1. BASE Low speed switching 1 MARKING: B7722. COLLETOR 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter V

..14. b772 to-126.pdf Size:390K _can-sheng

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ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

0.1. 2sb772.pdf Size:110K _st

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2SB772PNP medium power transistorFeatures High current Low saturation voltage Complement to 2SD882Applications12 Voltage regulation3 Relay driver SOT-32(TO-126) Generic switch Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a PNP transistor manufactured by using planar Technology re

0.2. ksb772.pdf Size:76K _fairchild_semi

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KSB772Audio Frequency Power Amplifier Low Speed Switching Complement to KSD882TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 VVEBO Emitter-Base Voltage - 5 VIC Collector Current (DC) - 3

 0.3. 2sb772.pdf Size:162K _nec

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0.4. 2sb772-y.pdf Size:287K _mcc

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2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 0.5. 2sb772-r.pdf Size:287K _mcc

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2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

0.6. 2sb772-gr.pdf Size:287K _mcc

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2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

0.7. 2sb772-o.pdf Size:287K _mcc

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2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

0.8. b772-gr b772-o.pdf Size:245K _mcc

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B772-RMCCMicro Commercial ComponentsTMB772-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 B772-YPhone: (818) 701-4933B772-GRFax: (818) 701-4939Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55O

0.9. b772-r b772-y.pdf Size:245K _mcc

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B772-RMCCMicro Commercial ComponentsTMB772-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 B772-YPhone: (818) 701-4933B772-GRFax: (818) 701-4939Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55O

0.10. 2sb772.pdf Size:170K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number

0.11. b772ss.pdf Size:233K _utc

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UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pi

0.12. 2sb772l.pdf Size:24K _utc

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UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORDESCRIPTIONThe UTC 2SB772L is a medium power low voltagetransistor, designed for audio power amplifier, DC-DCconverter and voltage regulator.FEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SD882LTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C

0.13. 2sb772s.pdf Size:251K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882S ORDERING INFORMATION Ordering Num

0.14. b772s.pdf Size:346K _secos

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B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. BMin. Max. A 4.40 4.7

0.15. b772c.pdf Size:203K _secos

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B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-126CFEATURES Low frequency power amplifier Emitter High Current Collector Low Speed Switching Base CLASSIFICATION OF hFE Product-Rank B772C-R B772C-O B772C-Y B772C-GRRange 60~120 100~200 160

0.16. tsb772sct.pdf Size:78K _taiwansemi

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TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T

0.17. tsb772ck.pdf Size:89K _taiwansemi

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TSB772 Low Vcesat PNP Transistor TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882 TSB772CK B0 TO-126 250pcs / Bulk Structure TSB7

0.18. csb772 p q.pdf Size:221K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP PLASTIC POWER TRANSISTORCSB772TO126 Plastic PackageECBComplementary CSD882Audio Frequency Power Amplifier and Low Speed SwitchingABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >40 VCollector

0.19. 2sb772-s.pdf Size:174K _fci

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0.20. b772m.pdf Size:643K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L B772M TRANSISTOR (PNP) FEATURES 1. BASE Low Speed Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

0.21. 2sb772.pdf Size:220K _jmnic

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JMnic Product Specification Silicon PNP Power Transistors 2SB772 DESCRIPTION With TO-126 package Complement to type 2SD882 APPLICATIONS Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DC- DC converter and relay driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25

0.22. ktb772.pdf Size:396K _kec

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SEMICONDUCTOR KTB772TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTD882.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -40 VCollector-Base Voltage_+F 11.0 0.3G 2.9 MAXVCEO -30 V

0.23. b772s.pdf Size:195K _lge

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B772S Transistor(PNP)TO-921. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters)IC Collector Current -Continuous -3 A PC Collector Power Dis

0.24. 2sb772 2sd882.pdf Size:687K _wietron

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2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc

0.25. hsb772.pdf Size:51K _hsmc

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Spec. No. : HE6605HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/5HSB772PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772 is designed for using in output stage of 1w audio amplifier, voltageregulator, DC-DC converter and relay driver.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperat

0.26. hsb772s.pdf Size:59K _hsmc

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Spec. No. : HE6549HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5HSB772SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772S is designed for using in output stage of 0.75W amplifier, voltageregulator, DC-DC converter and driver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature..................

0.27. btb772t3.pdf Size:229K _cystek

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Spec. No. : C817T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3 Pb-free lead plating and halogen-free package Symbol Outline

0.28. btb772am3.pdf Size:247K _cystek

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Spec. No. : C817M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date:2013.08.12 Page:1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an

0.29. btb772aj3.pdf Size:297K _cystek

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Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2013.02.19 Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252AA BTB772AJ3BBase C

0.30. btb772i3.pdf Size:248K _cystek

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Spec. No. : C817I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date: 2011.08.30 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -3ABTB772I3 RCESAT(TYP) 150m Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics High temperature soldering guaranteed : 265C/5s, 0.25(6.3

0.31. btb772st3.pdf Size:221K _cystek

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Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute

0.32. btb772sa3.pdf Size:352K _cystek

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Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77

0.33. btb772j3.pdf Size:272K _cystek

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Spec. No. : C809J3 Issued Date : 2008.06.12 CYStech Electronics Corp. Revised Date: 2010.12.08 Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3ARCE(SAT) 225m typ.Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA

0.34. 2sb772t.pdf Size:520K _blue-rocket-elect

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2SB772T(BR3CA772T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features V ,,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.35. 2sb772m.pdf Size:341K _blue-rocket-elect

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2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications ,,

0.36. 2sb772n.pdf Size:668K _blue-rocket-elect

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2SB772N(BR3CA772N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 PNP Silicon PNP transistor in a SOT-223 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.37. 2sb772d.pdf Size:944K _blue-rocket-elect

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2SB772D (BR3CA772D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.38. 2sb772l.pdf Size:468K _blue-rocket-elect

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2SB772L(BR3CA772L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features , h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.39. 2sb772b.pdf Size:315K _blue-rocket-elect

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2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

0.40. st2sb772r.pdf Size:709K _semtech

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ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati

0.41. st2sb772u.pdf Size:431K _semtech

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ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Curre

0.42. st2sb772t.pdf Size:668K _semtech

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ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current

0.43. l2sb772q.pdf Size:131K _lrc

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LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB772Q L2SB772PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB772Q 72Q 2500/Tape&Reel2,4L2SB772P 72P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas

0.44. hb772s.pdf Size:27K _shantou-huashan

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PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

0.45. b772p.pdf Size:116K _jdsemi

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RB772P www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

0.46. b772pc.pdf Size:114K _jdsemi

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RB772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 2222FEATURES 2

0.47. b772pc 2.pdf Size:114K _jdsemi

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RB772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

0.48. ftb772f.pdf Size:243K _first_silicon

B772
B772

SEMICONDUCTORFTB772FTECHNICAL DATA AFTB772F PNP TRANSISTORCHG FEATURES Low Speed SwitchingDDKF FDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20 MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 TYP1. BASEH 1.8 MAX2. COLLECTORVCBO Collector-Base Voltage -40

0.49. ftb772d.pdf Size:245K _first_silicon

B772
B772

SEMICONDUCTORFTB772DTECHNICAL DATAFTB772D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage -40 V J 0 5 0 1L 0 50 0 101 2 3

0.50. ftb772.pdf Size:112K _first_silicon

B772
B772

SEMICONDUCTORFTB772TECHNICAL DATAAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGDEAFEATURESComplementary to FTD882. CF GDIM MILLIMETERSBA 8.3 MAXMAXIMUM RATING (Ta=25 )B 11.30.3C 4.15 TYP1 2 3D 3.20.2CHARACTERISTIC SYMBOL RATING UNITE 2.00.2H F 2.80.1IVCBO -40 VCollector-Base VoltageG 3.20.1H 1.270.1KVCEO -30 VCollector

0.51. 2sb772a.pdf Size:344K _kexin

B772

SMD Type TransistorsPNP Transistors2SB772A Features1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -70 VCollector to Emitter Voltage VCEO -60 VEmitter to Base V

0.52. 2sb772.pdf Size:1072K _kexin

B772
B772

SMD Type TransistorsPNP Transistors2SB772 Features PNP transistor High current output up to 3A1.70 0.1 Low Saturation Voltage Complement to 2SD8820.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -40 VCollector to Emitter Voltage VCEO -30 VEmitter to Base Vol

0.53. 2sb772-126.pdf Size:891K _kexin

B772
B772

DIP Type TransistorsPNP Transistors2SB772TO-126Unit:mm8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage3.20 0.10 Complement to 2SD882(1.00) (0.50)0.75 0.101.75 0.201.60 0.100.75 0.101 2 3#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitte

0.54. 2sb772gp.pdf Size:110K _chenmko

B772
B772

CHENMKO ENTERPRISE CO.,LTD2SB772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.

0.55. 2sb772zgp.pdf Size:124K _chenmko

B772
B772

CHENMKO ENTERPRISE CO.,LTD2SB772ZGPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate).6.5

0.56. 2sb772i.pdf Size:288K _lzg

B772
B772

2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE

0.57. 2sb772d 3ca772d.pdf Size:413K _lzg

B772
B772

2SB772D(3CA772D) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h ./Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

0.58. 2sb772s 3ca772s.pdf Size:256K _lzg

B772
B772

2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

0.59. 2sb772b 3ca772b.pdf Size:327K _lzg

B772
B772

2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

0.60. 2sb772m 3ca772m.pdf Size:220K _lzg

B772
B772

2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR :,, Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE/Absolut

0.61. 2sb772t 3ca772t.pdf Size:348K _lzg

B772
B772

2SB772T(3CA772T) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

0.62. 2sb772l 3ca772l.pdf Size:280K _lzg

B772
B772

2SB772L(3CA772L) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

0.63. 2sb772i 3ca772i.pdf Size:288K _lzg

B772
B772

2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE

0.64. pmb772.pdf Size:190K _pmc_components

B772

PMB772 PNP SILICON POWER TRANSISTOR designed for output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -40 VCollector Emitter Voltage VCEO -30 VEmitter Base Voltage VEBO -5 VCollector Current (DC) IC(DC) -3 ACollector Current (Pulse) IC(Pulse)

0.65. aljb772.pdf Size:80K _sunroc

B772

SUNROCALJB772 TRANSISTOR(PNP)FEATURES1. EMITTERPower dissipationPCM:1W(Tamb=25)2. COLLECTORCollector currentICM:-1.5A3. BASECollector-base voltageV(BR)CBO: -40V1 2 3Opcrating and storage junction temperature rangeTJ,Tstg:-65 to -150ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specjfied):MIN TYP MAX UNITParameter Symbol Test conditionsCollec

0.66. 2sb772.pdf Size:213K _inchange_semiconductor

B772
B772

isc Silicon PNP Power Transistor 2SB772DESCRIPTIONHigh Collector Current -I = -3ACHigh Collector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD882Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in the output stage of 3 watts a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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