All Transistors. B772 Datasheet

 

B772 Transistor. Datasheet pdf. Equivalent

Type Designator: B772

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

B772 Transistor Equivalent Substitute - Cross-Reference Search

B772 Datasheet (PDF)

1.1. aljb772.pdf Size:80K _update

B772

SUNROC ALJB772 TRANSISTOR(PNP) FEATURES 1. EMITTER Power dissipation PCM:1W(Tamb=25℃) 2. COLLECTOR Collector current ICM:-1.5A 3. BASE Collector-base voltage V(BR)CBO: -40V 1 2 3 Opcrating and storage junction temperature range TJ,Tstg:-65℃ to -150℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specjfied): MIN TYP MAX UNIT Parameter Symbol Test conditions Collec

1.2. 2sb772d_3ca772d.pdf Size:413K _update

B772
B772

2SB772D(3CA772D) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换和继电器驱动。 Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. 特点:饱和压降小, h 高且线性好./Features: Low saturation voltage, excellent h linearity FE FE and high h . FE 极

1.3. 2sb772-y.pdf Size:287K _update

B772
B772

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

1.4. 2sb772b_3ca772b.pdf Size:327K _update

B772
B772

2SB772B(3CA772B) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换和继电器驱动。 Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. 特点:饱和压降小, h 高且线性好/Features: Low saturation voltage, excellent h linearity FE FE and high h . FE 极

1.5. 2sb772s_3ca772s.pdf Size:256K _update

B772
B772

2SB772S(3CA772S) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换器和继电器驱/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. 特点:饱和压降 V 小,线性极好,h 高/Features: Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE 极限

1.6. 2sb772m_3ca772m.pdf Size:220K _update

B772
B772

2SB772M(3CG772M) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于音频放大输出,电压调节器,电源转换和继电器驱动。 Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. 特点:饱和压降小, h 高且线性好/Features: Low saturation voltage, excellent h linearity FE FE and high h . FE 极限参数/Absolut

1.7. 2sb772-gr.pdf Size:287K _update

B772
B772

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

1.8. 2sb772zgp.pdf Size:124K _update

B772
B772

CHENMKO ENTERPRISE CO.,LTD 2SB772ZGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.5

1.9. 2sb772gp.pdf Size:110K _update

B772
B772

CHENMKO ENTERPRISE CO.,LTD 2SB772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX.

1.10. 2sb772-o.pdf Size:287K _update

B772
B772

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

1.11. 2sb772i.pdf Size:288K _update

B772
B772

2SB772I(3CA772I) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换和继电器驱动。 Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. 特点:饱和压降小, h 高且线性好. FE Features: Low saturation voltage, excellent h linearity and high h . FE FE 极

1.12. 2sb772-r.pdf Size:287K _update

B772
B772

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

1.13. 2sb772i_3ca772i.pdf Size:288K _update

B772
B772

2SB772I(3CA772I) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换和继电器驱动。 Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. 特点:饱和压降小, h 高且线性好. FE Features: Low saturation voltage, excellent h linearity and high h . FE FE 极

1.14. 2sb772t_3ca772t.pdf Size:348K _update

B772
B772

2SB772T(3CA772T) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换器和继电器驱/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. 特点:饱和压降 V 小,线性极好,h 高/Features: Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE 极限

1.15. 2sb772l_3ca772l.pdf Size:280K _update

B772
B772

2SB772L(3CA772L) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换和继电器驱动。 Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. 特点:饱和压降小, h 高且线性好/Features: Low saturation voltage, excellent h linearity FE FE and high h . FE 极

1.16. 2sb772.pdf Size:110K _st

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B772

2SB772 PNP medium power transistor Features High current Low saturation voltage Complement to 2SD882 Applications 1 2 Voltage regulation 3 Relay driver SOT-32 (TO-126) Generic switch Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged h

1.17. ksb772.pdf Size:76K _fairchild_semi

B772
B772

KSB772 Audio Frequency Power Amplifier Low Speed Switching Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP

1.18. 2sb772.pdf Size:162K _nec

B772
B772

1.19. b772ss.pdf Size:233K _utc

B772
B772

UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pin A

1.20. 2sb772.pdf Size:170K _utc

B772
B772

UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number Pi

1.21. 2sb772l.pdf Size:24K _utc

B772
B772

UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772L is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882L TO-92L 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unl

1.22. 2sb772s.pdf Size:251K _utc

B772
B772

UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882S ORDERING INFORMATION Ordering Number

1.23. b772s.pdf Size:346K _secos

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B772

B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. B Min. Max. A 4.40 4.70

1.24. b772c.pdf Size:203K _secos

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B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-126C FEATURES ? Low frequency power amplifier ?Emitter ? High Current ?Collector ? Low Speed Switching ?Base CLASSIFICATION OF hFE Product-Rank B772C-R B772C-O B772C-Y B772C-GR Range 60~120 100~200 160~320 200~400 M

1.25. b772.pdf Size:380K _secos

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B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 2.7± 0.2 7.6±0.2 * Low speed switching 1.3± 0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 o 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted 2.2±0.1 Symbol Parameter Value Units 1.27±0.1 VCBO Collector-Base Voltage -

1.26. tsb772sct.pdf Size:78K _taiwansemi

B772
B772

 TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information ● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing ● Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T

1.27. tsb772ck.pdf Size:89K _taiwansemi

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B772

 TSB772 Low Vcesat PNP Transistor TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing ● Complementary part with TSD882 TSB772CK B0 TO-126 250pcs / Bulk Structure TSB7

1.28. csb772_p_q.pdf Size:221K _cdil

B772
B772

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB772 TO126 Plastic Package E C B Complementary CSD882 Audio Frequency Power Amplifier and Low Speed Switching ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >40 V Collector Emi

1.29. 2sb772-s.pdf Size:174K _fci

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B772

1.30. 2sb772.pdf Size:220K _jmnic

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B772

JMnic Product Specification Silicon PNP Power Transistors 2SB772 DESCRIPTION · ·With TO-126 package ·Complement to type 2SD882 APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DC- DC converter and relay driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?)

1.31. ktb772.pdf Size:396K _kec

B772
B772

SEMICONDUCTOR KTB772 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTD882. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D ?3.2 0.1 E 3.5 VCBO -40 V Collector-Base Voltage _ + F 11.0 0.3 G 2.9 MAX VCEO -30 V Col

1.32. b772.pdf Size:477K _htsemi

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B772

B772 TRANSISTOR (PNP) SOT-89 FEATURES 1 2 3 Low speed switching 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Therm

1.33. b772.pdf Size:245K _gsme

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B772

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro -Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro -Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. GMB772 SOT-89 ???(SOT-89 transistors) (Ta=25 ) (Ta=25 ) ¦?????(Ta=25 ) (Ta=25?) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage VCBO -40 V ???-???? Collect-Emitter

1.34. b772_to-252-2l.pdf Size:182K _lge

B772
B772

B772 Transistor(PNP) 1. BASE TO-252-2L 2. COLLECTOR 3. EMITTER Features Low speed switching MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Di

1.35. b772_to-251.pdf Size:185K _lge

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B772

B772(PNP) TO-251 Transistor 1. EMITTER TO-251 2. COLLECTOR 3 BASE 1 2 3 Features Low speed switching MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector P

1.36. b772_sot-89.pdf Size:275K _lge

B772
B772

B772 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLETOR 1 4.6 B 2 4.4 1.6 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low speed switching 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -4

1.37. b772s.pdf Size:195K _lge

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B772

B772S Transistor(PNP) TO-92 1. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -3 A PC Collector Power Dissipat

1.38. 2sb772_2sd882.pdf Size:687K _wietron

B772
B772

2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc Co

1.39. b772.pdf Size:348K _willas

B772
B772

FM120-M WILLAS THRU B772 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize b

1.40. hsb772s.pdf Size:59K _hsmc

B772
B772

Spec. No. : HE6549 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2004.08.13 MICROELECTRONICS CORP. Page No. : 1/5 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.....................

1.41. hsb772.pdf Size:51K _hsmc

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B772

Spec. No. : HE6605 HI-SINCERITY Issued Date : 1993.05.15 Revised Date : 2005.08.18 MICROELECTRONICS CORP. Page No. : 1/5 HSB772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature

1.42. btb772j3.pdf Size:272K _cystek

B772
B772

Spec. No. : C809J3 Issued Date : 2008.06.12 CYStech Electronics Corp. Revised Date: 2010.12.08 Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3A RCE(SAT) 225mΩ typ. Features • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD882J3 • RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA

1.43. btb772t3.pdf Size:229K _cystek

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B772

Spec. No. : C817T3-H Issued Date : 2002.08.18 CYStech Electronics Corp. Revised Date : 2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3 • Pb-free lead plating and halogen-free package Symbol Outline

1.44. btb772aj3.pdf Size:297K _cystek

B772
B772

Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2013.02.19 Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Features • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Pb-free lead plating and halogen-free package Symbol Outline TO-252AA BTB772AJ3 B:Base C

1.45. btb772i3.pdf Size:248K _cystek

B772
B772

Spec. No. : C817I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date: 2011.08.30 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -3A BTB772I3 RCESAT(TYP) 150mΩ Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • High temperature soldering guaranteed : 265°C/5s, 0.25”(6.3

1.46. btb772st3.pdf Size:221K _cystek

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B772

Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features • Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Pb-free package Symbol Outline BTB772ST3 TO-126 B:Base C:Collector E:Emitter E C B Absolute

1.47. btb772am3.pdf Size:247K _cystek

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B772

Spec. No. : C817M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date:2013.08.12 Page:1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB772AM3 RCESAT(typ) 0.12Ω Features • Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882AM3 • Pb-free lead plating an

1.48. b772_to-251.pdf Size:304K _can-sheng

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B772

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsula

1.49. b772_sot-89.pdf Size:331K _can-sheng

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B772

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com B772 TRANSISTOR(PNP) SOT-89 1 2 3 FEATURES 1. BASE Low speed switching 1 MARKING: B772 2. COLLETOR 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter V

1.50. b772_to-252.pdf Size:304K _can-sheng

B772
B772

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

1.51. b772_to-126.pdf Size:390K _can-sheng

B772
B772

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsula

1.52. b772.pdf Size:209K _can-sheng

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B772

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-126 TO-126 TO-126 TO-126 FEATURES Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units Symbol Parameter Valu

1.53. 2sb772t.pdf Size:520K _blue-rocket-elect

B772
B772

2SB772T(BR3CA772T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降 V 小,线性极好,h 高。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换

1.54. 2sb772l.pdf Size:468K _blue-rocket-elect

B772
B772

2SB772L(BR3CA772L) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92LM Plastic Package. 特征 / Features 饱和压降小, h 高且线性好。 FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换和继电

1.55. 2sb772b.pdf Size:315K _blue-rocket-elect

B772
B772

2SB772B(3CA772B) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换和继电器驱动。 Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. 特点:饱和压降小, h 高且线性好/Features: Low saturation voltage, excellent h linearity FE FE and high h . FE 极

1.56. 2sb772d.pdf Size:944K _blue-rocket-elect

B772
B772

2SB772D (BR3CA772D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package. 特征 / Features 饱和压降小,h 高且线性好。 FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换和继电

1.57. 2sb772m.pdf Size:341K _blue-rocket-elect

B772
B772

2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 饱和压降小, hFE 高且线性好。 Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于音频放大输出,电压调节器,电源转换和继电器驱动。

1.58. 2sb772n.pdf Size:668K _blue-rocket-elect

B772
B772

2SB772N(BR3CA772N) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-223 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-223 Plastic Package. 特征 / Features 饱和压降小,h 高且线性好。 FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换和继电

1.59. st2sb772r.pdf Size:709K _semtech

B772
B772

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V -IC Collector Current 3 A O Total Power Dissipati

1.60. st2sb772t.pdf Size:668K _semtech

B772
B772

ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current

1.61. st2sb772u.pdf Size:431K _semtech

B772
B772

ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Curre

1.62. l2sb772q.pdf Size:131K _lrc

B772
B772

LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB772Q L2SB772P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB772Q 72Q 2500/Tape&Reel 2,4 L2SB772P 72P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25°C) BASE Parameter Symbol Limits Unit 3 Collector-bas

1.63. hb772s.pdf Size:27K _shantou-huashan

B772

 PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S █ AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯

1.64. b772pc_2.pdf Size:114K _jdsemi

B772
B772

R B772PC 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si PNP ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2. 2. 2.FEATURES 2.

1.65. b772pc.pdf Size:114K _jdsemi

B772
B772

R B772PC 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si PNP ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2 2. 2. 2.FEATURES 2

1.66. b772p.pdf Size:116K _jdsemi

B772
B772

R B772P 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si PNP ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2. 2. 2.FEATURES 2.

1.67. ftb772f.pdf Size:243K _first_silicon

B772
B772

SEMICONDUCTOR FTB772F TECHNICAL DATA A FTB772F PNP TRANSISTOR C H G FEATURES Low Speed Switching D D K F F DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 TYP 1. BASE H 1.8 MAX 2. COLLECTOR VCBO Collector-Base Voltage -40

1.68. ftb772d.pdf Size:245K _first_silicon

B772
B772

SEMICONDUCTOR FTB772D TECHNICAL DATA FTB772D TRANSISTOR A I FEATURES C J Low Speed Switching DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 ± 0 2 L F F VCBO Collector-Base Voltage -40 V J 0 5 ± 0 1 L 0 50 ± 0 10 1 2 3

1.69. ftb772.pdf Size:112K _first_silicon

B772
B772

SEMICONDUCTOR FTB772 TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING D E A FEATURES Complementary to FTD882. C F G DIM MILLIMETERS B A 8.3 MAX MAXIMUM RATING (Ta=25 ) B 11.3±0.3 C 4.15 TYP 1 2 3 D 3.2±0.2 CHARACTERISTIC SYMBOL RATING UNIT E 2.0±0.2 H F 2.8±0.1 I VCBO -40 V Collector-Base Voltage G 3.2±0.1 H 1.27±0.1 K VCEO -30 V Collector

1.70. 2sb772.pdf Size:1072K _kexin

B772
B772

SMD Type Transistors PNP Tr ansistors 2SB772 ■ Features ● PNP transistor High current output up to 3A 1.70 0.1 ● Low Saturation Voltage ● Complement to 2SD882 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Vol

1.71. 2sb772-126.pdf Size:891K _kexin

B772
B772

DIP Type Transistors PNP Tr ansistors 2SB772 TO-126 Unit:mm 8.00± 0.30 3.25± 0.20 ■ Features ● PNP transistor High current output up to 3A ● Low Saturation Voltage ø3.20± 0.10 ● Complement to 2SD882 (1.00) (0.50) 0.75± 0.10 1.75± 0.20 1.60± 0.10 0.75± 0.10 1 2 3 #1 +0.10 2.28TYP 2.28TYP 0.50 –0.05 [2.28±0.20] [2.28±0.20] 1. Base 2. Collector 3. Emitte

1.72. 2sb772a.pdf Size:344K _kexin

B772

SMD Type Transistors PNP Tr ansistors 2SB772A ■ Features 1.70 0.1 ● PNP transistor High current output up to 3A ● Low Saturation Voltage ● Complement to 2SD882A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to Base Voltage VCBO -70 V Collector to Emitter Voltage VCEO -60 V Emitter to Base V

1.73. b772_sot89.pdf Size:389K _shenzhen-tuofeng-semi

B772
B772

Shenzhen Tuofeng Semiconductor Technology Co., Ltd B772 SOT-89 SOT-89 1 2 3 1. BASE 1 2. COLLETOR 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation

1.74. b772.pdf Size:2735K _shenzhen-tuofeng-semi

B772
B772

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR (PNP) FEATURES 1. EMITTER Low speed switching 2. COLLECTOR 3 BASE 1 2 3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

Datasheet: 2SD965A , 3DK2222A , A1015 , A42 , A44 , A733 , A92 , A94 , TIP42C , C1815 , C945 , CJF715 , D882 , HM4033 , HM879 , KTA1668 , KTA2014 .

 


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