S9014 Todos los transistores

S9014 NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM 0.1 A A Emitter H 0.013 0.100

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9014 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO VCEO Collector-Emitter Voltage 45 V V Emitter-Base Voltage 5 V

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 unless otherwise noted) MAXIMUM RATINGS (TA=25 Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9014 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE HFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High HFE HFE HFE=200 700 Low Noise NF=1dB(Typ.),10dB(Max.). Comple

S9014 Silicon Epitaxial Planar Transistor FEATURES A SOT-23 Complementary To S9015. Dim Min Max A 2.70 3.10 E Excellent HFE Linearity. B 1.10 1.50 K B C 1.0 Typical Power dissipation.(PC=0.2W) D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 G H 0.02 0.1 APPLICATIONS J 0.1 Typical H Per-Amplifier low level & low noise. K 2.20 2.60 C All Dimensions in mm MAXIMUM

S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A

S9014(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO

S9014 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Stor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM 0.4 W (Tamb=25 ) Collector current ICM 0.1 A 1 2 3 Collector-base voltage V(BR)CBO 50 V Operating and storage junction temperature range TJ, Tstg -55 to +150

NPN NPN EPITAXIAL SILICON TRANSISTOR R S9014 MAIN CHARACTERISTICS Package I 100mA C V 45V CEO P (SOT-23) 200mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit SO

TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES High total power dissipation.(PC=0.45W) TO-92 High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 1.EMITTER Symbol Parameter

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) FEATURES Complimentary to S9015 MARKING J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

Product specification Silicon Epitaxial Planar Transistor S9014 FEATURES Pb Complementary To S9015. Lead-free Excellent H Linearity. FE Power dissipation.(P =0.2W) C APPLICATIONS Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9014 J6 SOT-23 none is for Lead Free package; G is for

S9014 NPN SMD Transistor Package outline Features Collector current. (100mA) SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0.055 (1.40) 0.027 (0.69) 0.047 (1.20) 0.014 (0.35) Case Molded plastic, SOT-23 0.104 (2.64) 0.083 (2.10) Terminals

S9014 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features As complementary type the PNP transistor S9015 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V 1. BASE VCEO Collector-Emitter Voltage 4

S9014 General Purpose Transistors NPN Silicon FEATURES High Collector Current. SOT-23 Complementary to S9015. Excellent hFE Linearity. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Di

NPN SMD Transistor Formosa MS S9014 General Purpose Transistors NPN Silicon Package outline Features SOT-23 Collector current. (100mA) Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0.055 (1.40) 0.027 (0.69) 0.047 (1.20) 0.014 (0.35) Case Molded plasti

S9 014 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complementary to S9015 Marking J6 Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V C V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C B E R JA Thermal Resistance From Junctio

S9014 Silicon Epitaxial Planar Transistor FEATURES Complementary to S9015 Excellent h linearity FE Power dissipation (P = 0.2W) C APPLICATIONS Per-Amplifier low level & low noise SOT-23 MAXIMUM RATING @ T =25 unless otherwise specified A Symbol Parameter Value Units Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 unless otherwise noted) MAXIMUM RATINGS (TA=25 Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

S9014 NPN Transistors 3 2 1.Base Features 2.Emitter Excellent hFE linearity 1 3.Collector Collector Current IC=0.1A Simplified outline(SOT-23) Complementary to S9015 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.1 A Collector

S9014 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter Excellent hFE linearity 1 3.Collector Collector Current IC=0.1A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.1 A Collector Power Dissipat

S9014 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to S9015 Collector Current Ic=100mA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Power D

S9014 S9014 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9015 Power Dissipation of 200mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking J6 Maximum Ratings & Thermal Characteristics TA = 25 C unles

S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1 BASE 2 EMITTER 3 COLLECTOR MARKING J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 0.2 W

S9014 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 45Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=45V. Collector current IC=0.1A. ansition frequency fT>150MHz @ Tr IC=10mAdc, VCE=5Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 C Terminals Solde

S9014 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to S9015 Excellent h Linearity FE Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base V

NPN S9014 S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1 BASE 2 EMITTER 3 COLLECTOR MARKING J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Curren

SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO

SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC

MCC S9014-B Micro Commercial Components TM 20736 Marilla Street Chatsworth S9014-C Micro Commercial Components CA 91311 Phone (818) 701-4933 S9014-D Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.1A Collector-base Voltage 50V Transistors Operating and

MMS9014 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-Encapsulate Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Transistor Operating Junction Tempera

STS9014 NPN Silicon Transistor Description PIN Connection General purpose application C Switching application Features B Excellent hFE linearity hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) Low noise NF=10dB(Max.) at f=1KHz E Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92 A

S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55 0.2 3.5 0.2 Power dissipation PCM 0.4 W Collector current ICM 0.1 A Collector-base voltage V(BR)CBO 50 V 0.43+0.08 0.07 46+0.1 0. 0.1 Operating & storage junction temperature (1.27

S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W A L 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION Weight 0.0074 g D Collector H J F G 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR (NPN) SOT 323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO

S901 4W TRANSISTOR(NPN) SOT 323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 100 mA P Collector Power Dissi

S9014LT1 3 1 2 SOT-23 Value V CEO 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T 0.1 45 50 100 100 u 0.1 40 0.1 u 3.0 WEITRON 1/ 28-Apr-2011 http //www.weitron.com.tw S9014LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 100

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN FEATURES High total power dissipation.(pc=0.2w) Complementary to S9015LT1 MARKING L6 J6 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitt

GSTS9014LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 45V amplifier and switch. Collector Current 100mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTS9014LT1F SOT-23 Q 14Q

S9014W www.slkormicro.com 1 S9014W www.slkormicro.com 2

S9014 NPN Silicon Epitaxial Planar Transistor FEATURES Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) APPLICATIONS Per-Amplifier low level & low noise. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VE

R UMW UMW S9014 SOT-23 Plastic-Encapsulate Transistors SOT-23 S9014 TRANSISTOR (NPN) FEATURES 1. BASE Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

www.msksemi.com S9014-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to S9015-MS 1. BASE MARKING J6 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector

Jingdao Microelectronics co.LTD S9014 General Purpose Transistor NPN Silicon FEATURES Complementary to S9015 SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9014 = J6 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 unless otherwise noted) MAXIMUM RATINGS (TA=25 Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W

S9014T SOT-523 Plastic-Encapsulate Transistors TRANSISTOR (NPN) S9014T SOT 523 FEATURES Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Col

RoHS RoHS COMPLIANT COMPLIANT S9014 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking J6 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 50 Collector-Emitter Voltage V

SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT 323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 1

GENERAL PURPOSE TRANSISTORS NPN SILICON Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @ T = 25 C un