All Transistors. S9014 Datasheet

 

S9014 Datasheet, Equivalent, Cross Reference Search


   Type Designator: S9014
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23

 S9014 Transistor Equivalent Substitute - Cross-Reference Search

   

S9014 Datasheet (PDF)

 ..1. Size:253K  secos
s9014.pdf

S9014
S9014

S9014NPN SiliconElektronische Bauelemente Pre-Amplifier, Low Level & Low NoiseRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation11C 0.890 1.1102 BasePCM : 0.2 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : 0.1 A AEmitterH 0.013 0.100

 ..2. Size:778K  jiangsu
s9014.pdf

S9014
S9014

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 S9014 TRANSISTOR (NPN)1. BASE FEATURES2. EMITTER Complementary to S90153. COLLECTORMARKING: J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOVCEO Collector-Emitter Voltage 45 V V Emitter-Base Voltage 5 V

 ..3. Size:1202K  htsemi
s9014.pdf

S9014
S9014

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

 ..4. Size:241K  gsme
s9014.pdf

S9014
S9014

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9014FEATURESFEATURES FEATURESExcellent HFE Linearity HFE HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)High HFE HFEHFE=200700Low Noise NF=1dB(Typ.),10dB(Max.).Comple

 ..5. Size:1521K  lge
s9014.pdf

S9014
S9014

S9014 Silicon Epitaxial Planar TransistorFEATURES A SOT-23 Complementary To S9015. Dim Min MaxA 2.70 3.10E Excellent HFE Linearity. B 1.10 1.50K BC 1.0 Typical Power dissipation.(PC=0.2W) D 0.4 TypicalE 0.35 0.48JDG 1.80 2.00GH 0.02 0.1APPLICATIONS J 0.1 TypicalH Per-Amplifier low level & low noise. K 2.20 2.60CAll Dimensions in mm MAXIMUM

 ..6. Size:198K  lge
s9014 sot-23.pdf

S9014
S9014

S9014 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A

 ..7. Size:190K  lge
s9014 to-92.pdf

S9014
S9014

S9014(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters)VEBO

 ..8. Size:824K  wietron
s9014.pdf

S9014
S9014

S9014NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 45 VdcCollector-Base Voltage VCBO 50VdcEmitter-Base Voltage VEBO5.0 VdcCollector Current IC100 mAdcPD 0.4Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55 to +150Stor

 ..9. Size:347K  shenzhen
s9014.pdf

S9014
S9014

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25) Collector current ICM: 0.1 A 1 2 3 Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

 ..10. Size:280K  can-sheng
s9014.pdf

S9014
S9014

TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsFEATURESHigh total power dissipation.(PC=0.45W)TO-92High hFE and good linearityComplementary to S9015MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS1.EMITTERSymbol Parameter

 ..11. Size:317K  can-sheng
s9014 sot-23.pdf

S9014
S9014

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) FEATURES Complimentary to S9015 MARKING:J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

 ..12. Size:177K  galaxy
s9014.pdf

S9014
S9014

Product specification Silicon Epitaxial Planar Transistor S9014 FEATURES Pb Complementary To S9015. Lead-free Excellent H Linearity. FE Power dissipation.(P =0.2W) CAPPLICATIONS Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9014 J6 SOT-23 : none is for Lead Free package; G is for

 ..13. Size:904K  anbon
s9014.pdf

S9014
S9014

S9014NPN SMD TransistorPackage outlineFeatures Collector current. (100mA)SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant0.055 (1.40)0.027 (0.69)0.047 (1.20) 0.014 (0.35) Case : Molded plastic, SOT-230.104 (2.64)0.083 (2.10) Terminals :

 ..14. Size:1639K  born
s9014.pdf

S9014
S9014

S9014Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesAs complementary type the PNP transistor S9015 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V 1. BASE VCEO Collector-Emitter Voltage 4

 ..15. Size:3183K  fuxinsemi
s9014.pdf

S9014
S9014

S9014General Purpose Transistors NPN SiliconFEATURES High Collector Current. SOT-23 Complementary to S9015. Excellent hFE Linearity.MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOV Collector-Emitter Voltage 45 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 100 mA CP Collector Power Di

 ..16. Size:438K  fms
s9014.pdf

S9014
S9014

NPN SMD TransistorFormosa MSS9014General Purpose Transistors NPN SiliconPackage outlineFeaturesSOT-23 Collector current. (100mA) Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant0.055 (1.40)0.027 (0.69)0.047 (1.20) 0.014 (0.35) Case : Molded plasti

 ..17. Size:2012K  high diode
s9014.pdf

S9014
S9014

S9 014SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Complementary to S9015 Marking: J6Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V CV Collector-Emitter Voltage 45 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 100 mA CP Collector Power Dissipation 200 mW CB ERJA Thermal Resistance From Junctio

 ..18. Size:1207K  jsmsemi
s9014.pdf

S9014
S9014

S9014 Silicon Epitaxial Planar TransistorFEATURES Complementary to S9015Excellent h linearityFEPower dissipation (P = 0.2W)C APPLICATIONS Per-Amplifier low level & low noise SOT-23 MAXIMUM RATING @ T =25 unless otherwise specifiedASymbol Parameter Value Units Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage

 ..19. Size:1278K  mdd
s9014.pdf

S9014
S9014

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

 ..20. Size:573K  cn shikues
s9014.pdf

S9014
S9014

 ..21. Size:471K  cn yfw
s9014 s9014-l s9014-h.pdf

S9014
S9014

S9014 SOT-23 NPN Transistors32 1.BaseFeatures2.EmitterExcellent hFE linearity 1 3.CollectorCollector Current :IC=0.1A Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 45 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 0.1 ACollector Power Dissipat

 ..22. Size:1705K  cn yongyutai
s9014.pdf

S9014
S9014

S9014 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to S9015 Collector Current: Ic=100mAMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 45 VEmitter-Base Voltage VEBO 5 VCollector Current IC 100 mACollector Power D

 ..23. Size:1709K  cn twgmc
s9014.pdf

S9014
S9014

S9014S9014 TRANSISTOR (NPN) FEATURES Complementary to S9015 SOT-23 1BASE 2EMITTER MARKING: J6 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 VVEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 0.2 W

 ..24. Size:933K  cn doeshare
s9014.pdf

S9014
S9014

S9014 S9014 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9015 Power Dissipation of 200mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: J6 Maximum Ratings & Thermal Characteristics TA = 25C unles

 ..25. Size:316K  cn cbi
s9014.pdf

S9014
S9014

S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1BASE 2EMITTER 3COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 VVEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 0.2 W

 ..26. Size:971K  cn fosan
s9014.pdf

S9014
S9014

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGYCO.,LTDS9014MAXIMUM RATINGS (Ta=25) CHARACTERISTIC Symbol Rating Unit Collector-Base VoltageV 50 VdcCBO-Collector-Emitter VoltageV 45 VdcCEO-Emitter-Base VoltageV 5.0 VdcEBO

 ..27. Size:2015K  cn goodwork
s9014.pdf

S9014
S9014

S9014NPN GENERAL PURPOSE SWITCHING TRANSISTOR45Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=45V.Collector current IC=0.1A.ansition frequency fT>150MHz @ TrIC=10mAdc, VCE=5Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic 3CTerminals: Solde

 ..28. Size:645K  cn hottech
s9014.pdf

S9014
S9014

S9014BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to S9015 Excellent h LinearityFE Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base V

 ..29. Size:545K  cn idchip
s9014.pdf

S9014
S9014

NPN S9014S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1BASE 2EMITTER 3COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 VVEBO Emitter-Base Voltage 5 V IC Collector Curren

 0.1. Size:38K  fairchild semi
ss9014.pdf

S9014
S9014

SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO

 0.2. Size:47K  samsung
ss9014.pdf

S9014
S9014

SS9014 NPN EPITAXIAL SILICON TRANSISTORPRE-AMPLIFIER, LOW LEVEL & LOW NOISETO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 45VEmitter-Base Voltage VEBO 5mACollector Current IC

 0.3. Size:219K  mcc
s9014b s9014c s9014d.pdf

S9014
S9014

MCCS9014-BMicro Commercial ComponentsTM20736 Marilla Street ChatsworthS9014-CMicro Commercial ComponentsCA 91311Phone: (818) 701-4933S9014-DFax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.1A Collector-base Voltage 50VTransistors Operating and

 0.4. Size:495K  mcc
mms9014.pdf

S9014
S9014

MMS9014Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSPlastic-EncapsulateCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Tempera

 0.5. Size:179K  mcc
mms9014-h.pdf

S9014
S9014

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mms9014-l.pdf

S9014
S9014

 0.7. Size:207K  auk
sts9014.pdf

S9014
S9014

STS9014NPN Silicon TransistorDescription PIN Connection General purpose application C Switching application Features B Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) Low noise : NF=10dB(Max.) at f=1KHz E Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92A

 0.8. Size:130K  secos
s9014t.pdf

S9014
S9014

S9014TNPN SiliconElektronische BauelementePre-Amplifier, Low Level & Low NoiseRoHS Compliant Product A suffix of "-C" specifies halogen & lead-freeTO-92FEATURES4.550.2 3.50.2Power dissipation PCM : 0.4 WCollector currentICM : 0.1 ACollector-base voltageV(BR)CBO : 50 V0.43+0.080.0746+0.10. 0.1Operating & storage junction temperature(1.27

 0.9. Size:263K  secos
s9014w.pdf

S9014
S9014

S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W AL33Top View C B11 22K EPACKAGING INFORMATION Weight: 0.0074 g DCollectorH JF G3 Millimeter MillimeterREF. REF. Min. Max. Min. Max.MARKING CODE 1 A 1.

 0.10. Size:931K  jiangsu
s9014w.pdf

S9014
S9014

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR (NPN) SOT323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO

 0.11. Size:458K  htsemi
s9014w.pdf

S9014

S901 4WTRANSISTOR(NPN)SOT323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 100 mA P Collector Power Dissi

 0.12. Size:191K  wietron
s9014lt1.pdf

S9014
S9014

S9014LT1312SOT-23ValueVCEO 45505.01002251.8556S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T0.14550100100u0.1400.1 u3.0WEITRON 1/ 28-Apr-2011http://www.weitron.com.twS9014LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current GainhFE 100

 0.13. Size:588K  shenzhen
s9014lt1.pdf

S9014
S9014

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN FEATURES High total power dissipation.(pc=0.2w) Complementary to S9015LT1 MARKING: L6 J6 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitt

 0.14. Size:221K  globaltech semi
gsts9014lt1.pdf

S9014
S9014

GSTS9014LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 45V amplifier and switch. Collector Current : 100mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTS9014LT1F SOT-23 Q 14Q

 0.15. Size:1090K  slkor
s9014w-l s9014w-h.pdf

S9014
S9014

S9014Wwww.slkormicro.com1S9014Wwww.slkormicro.com2

 0.16. Size:331K  slkor
s9014l s9014h.pdf

S9014
S9014

S9014NPN Silicon Epitaxial Planar TransistorFEATURES Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) APPLICATIONS Per-Amplifier low level & low noise. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 45 VEmitter-Base Voltage VE

 0.17. Size:347K  umw-ic
s9014l s9014h.pdf

S9014
S9014

RUMW UMW S9014SOT-23 Plastic-Encapsulate TransistorsSOT-23 S9014 TRANSISTOR (NPN) FEATURES 1. BASE Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

 0.18. Size:4373K  msksemi
s9014-ms.pdf

S9014
S9014

www.msksemi.comS9014-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Complementary to S9015-MS1. BASEMARKING: J6 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Collector-Emitter Voltage 45 V CEOV Emitter-Base Voltage 5 V EBOI Collector

 0.19. Size:920K  cn salltech
s9014-l s9014-h.pdf

S9014
S9014

 0.20. Size:778K  cn shandong jingdao microelectronics
s9014-l s9014-h.pdf

S9014
S9014

Jingdao Microelectronics co.LTDS9014General Purpose TransistorNPN SiliconFEATURES Complementary to S9015SOT-23 3COLLECTOOR31DEVICE MARKINGBASES9014 = J612EMITTER2MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage

 0.21. Size:1989K  cn puolop
s9014-l s9014-h.pdf

S9014
S9014

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W

 0.22. Size:895K  cn shikues
s9014t-l s9014t-h.pdf

S9014
S9014

S9014TSOT-523 Plastic-Encapsulate Transistors TRANSISTOR (NPN)S9014TSOT523 FEATURES Small Surface Mount PackageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASEV Collector-Base Voltage 50 V CBO2. EMITTERV Collector-Emitter Voltage 45 V CEO3. COLLECTORV Emitter-Base Voltage 5 V EBOI Collector Current 100 mA CP Col

 0.23. Size:318K  cn yangzhou yangjie elec
s9014l s9014h.pdf

S9014
S9014

RoHS RoHSCOMPLIANT COMPLIANTS9014 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: J6 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 50 Collector-Emitter Voltage V

 0.24. Size:891K  cn cbi
s9014w.pdf

S9014
S9014

SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN)SOT323 FEATURES Complementary to S9015W Small Surface Mount PackageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 1

 0.25. Size:777K  cn xch
s9014b s9014c s9014d.pdf

S9014
S9014

GENERAL PURPOSE TRANSISTORS NPN SILICON Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10Maximum Ratings @ T = 25C un

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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