2N59. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N59 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N59

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.18 W

Tensión colector-base (Vcb): 25 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.8 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 90

Encapsulados: TO5

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2N59 datasheet

0.1. Size:311K rca
2n591.pdf pdf_icon

0.2. Size:119K 1
2n5947.pdf pdf_icon

0.3. Size:63K 1
2n5944.pdf pdf_icon

0.4. Size:628K 1
2n5941 2n5942.pdf pdf_icon

0.5. Size:208K 1
2n5944 2n5945 2n5946.pdf pdf_icon

0.6. Size:769K motorola
2n5986-89 2n5991.pdf pdf_icon

0.7. Size:100K fairchild semi
2n5951.pdf pdf_icon

September 2007 2N5951 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward

0.8. Size:295K fairchild semi
2n5961.pdf pdf_icon

Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Val60ue Units VCEO Collector-Emitter Volta

0.9. Size:97K fairchild semi
2n5950.pdf pdf_icon

September 2007 2N5950 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward

0.10. Size:469K fairchild semi
2n5962 mmbt5962.pdf pdf_icon

Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U

0.11. Size:25K fairchild semi
2n5952.pdf pdf_icon

2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current

0.12. Size:58K vishay
2n5911 2n5912.pdf pdf_icon

2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV) 2N5911 1 to 5 25 5 1 10 2N5912 1 to 5 25 5 1 15 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential Amps High-Frequency Performance D High

0.13. Size:65K central
2n5910 pn5910 2n5771.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

0.14. Size:114K central
2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf pdf_icon

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

0.15. Size:62K central
2n5961 2n5962 2n5963.pdf pdf_icon

Tel (631) 435-1110 Fax (631) 435-1824 www. cent ral semi . com

0.16. Size:71K central
2n5949 2n5950 2n5951 2n5952 2n5953.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

0.17. Size:68K intersil
2n5902 2n5903 2n5904 2n5905 2n5906 2n5907 2n5908 2n5909.pdf pdf_icon

0.18. Size:11K semelab
2n5937.pdf pdf_icon

2N5937 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 160V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.19. Size:12K semelab
2n5935.pdf pdf_icon

2N5935 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

0.20. Size:12K semelab
2n5934.pdf pdf_icon

2N5934 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.21. Size:10K semelab
2n5956.pdf pdf_icon

2N5956 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

0.22. Size:12K semelab
2n5930.pdf pdf_icon

2N5930 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.23. Size:11K semelab
2n5933.pdf pdf_icon

2N5933 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.24. Size:12K semelab
2n5971.pdf pdf_icon

2N5971 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

0.25. Size:11K semelab
2n5936.pdf pdf_icon

2N5936 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.26. Size:13K advanced-semi
2n5945.pdf pdf_icon

2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI 2N5945 is Designed for FM Land Mobile Applications in the PACKAGE STYLE .280 4L STUD 400 to 960 MHz. A 45 FEATURES C Common Emitter B E E PG = 9.0 dB at 2.0 W/470 MHz B Omnigold Metalization System C D J E I MAXIMUM RATINGS F G IC 0.8 A H #8-32 UNC K VCBO 36 V MINIMUM

0.27. Size:24K calogic
2n5911 2n5912.pdf pdf_icon

Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise specified) A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Te

0.28. Size:117K jmnic
2n5989 2n5990 2n5991.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3

0.29. Size:115K jmnic
2n5972.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL

0.30. Size:93K jmnic
2n5973.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL

0.31. Size:100K jmnic
2n5970.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL

0.32. Size:131K jmnic
2n5954 2n5955 2n5956.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area Complement to type 2N6372 2N6373 2N6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

0.33. Size:1285K sprague
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf pdf_icon

0.34. Size:165K cn sptech
2n5935.pdf pdf_icon

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5935 DESCRIPTION DC Current Gain- h = 20-100@I = 30A FE C Low Collector Saturation Voltage- V )= 2.0V(Max)@ I = 20A CE(sat C APPLICATIONS Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /relay dri

0.35. Size:189K inchange semiconductor
2n5989.pdf pdf_icon

isc Silicon NPN Power Transistor 2N5989 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(T =25 )

0.36. Size:122K inchange semiconductor
2n5989 2n5990 2n5991.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

0.37. Size:117K inchange semiconductor
2n5972.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max

0.38. Size:188K inchange semiconductor
2n5991.pdf pdf_icon

isc Silicon NPN Power Transistor 2N5991 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(T =25 )

0.39. Size:116K inchange semiconductor
2n5973.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max

0.40. Size:117K inchange semiconductor
2n5970.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max

0.41. Size:126K inchange semiconductor
2n5954 2n5955 2n5956.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area Complement to type 2N6372/6373/6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifie

Otros transistores... 2N5892 , 2N5893 , 2N5894 , 2N5895 , 2N5896 , 2N5897 , 2N5898 , 2N5899 , TIP120 , 2N5900 , 2N5901 , 2N591 , 2N5910 , 2N5913 , 2N5914 , 2N5915 , 2N591-5 .