2N59 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N59 Specs and Replacement

Type Designator: 2N59

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.18 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO5

2N59 Substitution

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2N59 datasheet

0.1. Size:311K rca

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2n5951.pdf pdf_icon

September 2007 2N5951 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward... See More ⇒

0.8. Size:295K fairchild semi

2n5961.pdf pdf_icon

Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Val60ue Units VCEO Collector-Emitter Volta... See More ⇒

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2n5950.pdf pdf_icon

September 2007 2N5950 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward... See More ⇒

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2n5962 mmbt5962.pdf pdf_icon

Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒

0.11. Size:25K fairchild semi

2n5952.pdf pdf_icon

2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current ... See More ⇒

0.12. Size:58K vishay

2n5911 2n5912.pdf pdf_icon

2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV) 2N5911 1 to 5 25 5 1 10 2N5912 1 to 5 25 5 1 15 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential Amps High-Frequency Performance D High... See More ⇒

0.13. Size:65K central

2n5910 pn5910 2n5771.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

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TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒

0.15. Size:62K central

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Tel (631) 435-1110 Fax (631) 435-1824 www. cent ral semi . com ... See More ⇒

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2n5937.pdf pdf_icon

2N5937 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 160V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

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2N5935 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒

0.20. Size:12K semelab

2n5934.pdf pdf_icon

2N5934 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

0.21. Size:10K semelab

2n5956.pdf pdf_icon

2N5956 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif... See More ⇒

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2N5930 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

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2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI 2N5945 is Designed for FM Land Mobile Applications in the PACKAGE STYLE .280 4L STUD 400 to 960 MHz. A 45 FEATURES C Common Emitter B E E PG = 9.0 dB at 2.0 W/470 MHz B Omnigold Metalization System C D J E I MAXIMUM RATINGS F G IC 0.8 A H #8-32 UNC K VCBO 36 V MINIMUM ... See More ⇒

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Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise specified) A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Te... See More ⇒

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3... See More ⇒

0.29. Size:115K jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒

0.30. Size:93K jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒

0.31. Size:100K jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒

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SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5935 DESCRIPTION DC Current Gain- h = 20-100@I = 30A FE C Low Collector Saturation Voltage- V )= 2.0V(Max)@ I = 20A CE(sat C APPLICATIONS Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /relay dri... See More ⇒

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isc Silicon NPN Power Transistor 2N5989 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

0.36. Size:122K inchange semiconductor

2n5989 2n5990 2n5991.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.... See More ⇒

0.37. Size:117K inchange semiconductor

2n5972.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max... See More ⇒

0.38. Size:188K inchange semiconductor

2n5991.pdf pdf_icon

isc Silicon NPN Power Transistor 2N5991 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

0.39. Size:116K inchange semiconductor

2n5973.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max... See More ⇒

0.40. Size:117K inchange semiconductor

2n5970.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max... See More ⇒

0.41. Size:126K inchange semiconductor

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area Complement to type 2N6372/6373/6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifie... See More ⇒

Detailed specifications: 2N5892 , 2N5893 , 2N5894 , 2N5895 , 2N5896 , 2N5897 , 2N5898 , 2N5899 , TIP120 , 2N5900 , 2N5901 , 2N591 , 2N5910 , 2N5913 , 2N5914 , 2N5915 , 2N591-5 .