SS126 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SS126
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 28
Paquete / Cubierta: TO39

Búsqueda de reemplazo de transistor bipolar SS126

SS126 Datasheet (PDF)

..1. Size:492K gdr
ss106 ss108 ss109 ss125 ss126 ss216 ss218 ss219 sse216 sse219 ssy20.pdf

..2. Size:123K gdr
ss106 ss108 ss109 ss120 ss125 ss126 ss200 ss201 ss202 ss216 ss218 ss219.pdf

0.1. Size:307K infineon
bss126.pdf

BSS126SIPMOS Small-Signal-TransistorProduct SummaryFeaturesVDS 600 V N-channelRDS(on),max 700 Depletion modeIDSS,min 0.007 A dv /dt ratedPG-SOT-23 Available with VGS(th) indicator on reel Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Type Package Pb-free Tape and Reel Informati

0.2. Size:83K onsemi
nss12601cf8-d.pdf

NSS12601CF8T1G12 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

0.3. Size:106K onsemi
nss12600cf8.pdf

NSS12600CF8T1G12 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.http://onsem

0.4. Size:659K onsemi
nss12601cf8t1g.pdf