SS126 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SS126

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 28

Encapsulados: TO39

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SS126 datasheet

 ..1. Size:492K  gdr
 ss106 ss108 ss109 ss125 ss126 ss216 ss218 ss219 sse216 sse219 ssy20.pdf pdf_icon

SS126

 ..2. Size:123K  gdr
 ss106 ss108 ss109 ss120 ss125 ss126 ss200 ss201 ss202 ss216 ss218 ss219.pdf pdf_icon

SS126

 0.1. Size:307K  infineon
 bss126.pdf pdf_icon

SS126

BSS126 SIPMOS Small-Signal-Transistor Product Summary Features VDS 600 V N-channel RDS(on),max 700 Depletion mode IDSS,min 0.007 A dv /dt rated PG-SOT-23 Available with VGS(th) indicator on reel Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Pb-free Tape and Reel Informati

 0.2. Size:83K  onsemi
 nss12601cf8-d.pdf pdf_icon

SS126

NSS12601CF8T1G 12 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

MOSTRAR MÁS

Otros transistores... SF829, SFE225, SFE235, SFE245, SS106, SS108, SS109, SS125, 2SD1047, SS200, SS201, SS202, SS216, SS218, SS219, SSE200, SSE201