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SS126 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SS126
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 28
   Paquete / Cubierta: TO39
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SS126 Datasheet (PDF)

 0.1. Size:307K  infineon
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SS126

BSS126SIPMOS Small-Signal-TransistorProduct SummaryFeaturesVDS 600 V N-channelRDS(on),max 700 Depletion modeIDSS,min 0.007 A dv /dt ratedPG-SOT-23 Available with VGS(th) indicator on reel Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Type Package Pb-free Tape and Reel Informati

 0.2. Size:83K  onsemi
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SS126

NSS12601CF8T1G12 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 3DD15 | KSC900G | Q-00369C | KT8143M | BF883 | KT501J | BSS37

 

 
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