SS126 Specs and Replacement

Type Designator: SS126

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 28

Noise Figure, dB: -

Package: TO39

 SS126 Substitution

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SS126 datasheet

 ..1. Size:492K  gdr

 ss106 ss108 ss109 ss125 ss126 ss216 ss218 ss219 sse216 sse219 ssy20.pdf pdf_icon

SS126

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 ..2. Size:123K  gdr

 ss106 ss108 ss109 ss120 ss125 ss126 ss200 ss201 ss202 ss216 ss218 ss219.pdf pdf_icon

SS126

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 0.1. Size:307K  infineon

 bss126.pdf pdf_icon

SS126

BSS126 SIPMOS Small-Signal-Transistor Product Summary Features VDS 600 V N-channel RDS(on),max 700 Depletion mode IDSS,min 0.007 A dv /dt rated PG-SOT-23 Available with VGS(th) indicator on reel Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Pb-free Tape and Reel Informati... See More ⇒

 0.2. Size:83K  onsemi

 nss12601cf8-d.pdf pdf_icon

SS126

NSS12601CF8T1G 12 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒

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Detailed specifications: SF829, SFE225, SFE235, SFE245, SS106, SS108, SS109, SS125, 2SD1047, SS200, SS201, SS202, SS216, SS218, SS219, SSE200, SSE201

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