All Transistors. SS126 Datasheet

 

SS126 Datasheet and Replacement


   Type Designator: SS126
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Forward Current Transfer Ratio (hFE), MIN: 28
   Noise Figure, dB: -
   Package: TO39
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SS126 Datasheet (PDF)

 ..1. Size:492K  gdr
 ss106 ss108 ss109 ss125 ss126 ss216 ss218 ss219 sse216 sse219 ssy20.pdf pdf_icon

SS126

 ..2. Size:123K  gdr
 ss106 ss108 ss109 ss120 ss125 ss126 ss200 ss201 ss202 ss216 ss218 ss219.pdf pdf_icon

SS126

 0.1. Size:307K  infineon
 bss126.pdf pdf_icon

SS126

BSS126SIPMOS Small-Signal-TransistorProduct SummaryFeaturesVDS 600 V N-channelRDS(on),max 700 Depletion modeIDSS,min 0.007 A dv /dt ratedPG-SOT-23 Available with VGS(th) indicator on reel Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Type Package Pb-free Tape and Reel Informati

 0.2. Size:83K  onsemi
 nss12601cf8-d.pdf pdf_icon

SS126

NSS12601CF8T1G12 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MM3725 | DMC364A6 | AC166 | KT837E1-IM | 2SC5489 | KSD5741 | L9012RLT3G

Keywords - SS126 transistor datasheet

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