Справочник транзисторов. SS126

 

Биполярный транзистор SS126 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SS126
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Статический коэффициент передачи тока (hfe): 28
   Корпус транзистора: TO39

 Аналоги (замена) для SS126

 

 

SS126 Datasheet (PDF)

 0.1. Size:307K  infineon
bss126.pdf

SS126
SS126

BSS126SIPMOS Small-Signal-TransistorProduct SummaryFeaturesVDS 600 V N-channelRDS(on),max 700 Depletion modeIDSS,min 0.007 A dv /dt ratedPG-SOT-23 Available with VGS(th) indicator on reel Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Type Package Pb-free Tape and Reel Informati

 0.2. Size:83K  onsemi
nss12601cf8-d.pdf

SS126
SS126

NSS12601CF8T1G12 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 0.3. Size:106K  onsemi
nss12600cf8.pdf

SS126
SS126

NSS12600CF8T1G12 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.http://onsem

 0.4. Size:659K  onsemi
nss12601cf8t1g.pdf

SS126
SS126

NSS12601CF8T1G12 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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