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D965 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: D965

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 42 V

Tensión colector-emisor (Vce): 22 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Ganancia de corriente contínua (hfe): 340

Empaquetado / Estuche: TO92

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D965 Datasheet (PDF)

1.1. 2sd965-q.pdf Size:176K _update

D965
D965

Product specification 2SD965-Q Unit:mm SOT-89 1.50 ±0.1 4.50±0.1 1.80±0.1 ■ Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44±0.1 0.48±0.1 0.53±0.1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating

1.2. 2sd965k.pdf Size:124K _update

D965

SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V C

1.3. d965ass.pdf Size:189K _upd

D965
D965

UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P

1.4. d965ss.pdf Size:189K _upd

D965
D965

UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P

1.5. d965-t.pdf Size:229K _upd

D965
D965

MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R

1.6. d965v.pdf Size:110K _upd

D965

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base

1.7. d965-r.pdf Size:229K _upd

D965
D965

MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R

1.8. 2sd965.pdf Size:39K _panasonic

D965
D965

Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Coll

1.9. 2sd965 e.pdf Size:43K _panasonic

D965
D965

Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Coll

1.10. 2sd965.pdf Size:18K _utc

D965
D965

UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * Collector-Emitter voltage up to 20 V APPLICATIONS 1 * Audio amplifier * Flash unit of camera * Switching circuit TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base volt

1.11. d965.pdf Size:272K _secos

D965
D965

D965 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 ? Audio amplifier G H ?Emitter ? Flash unit of camera ?Collector ? Switching circuit ?Base J A D CLASSIFICATION OF hFE(2) Millimeter REF. B Min. Max. A 4.40 4.70 Rank R T V B 4.30 4.70 K C 12.70 - Range 340 - 600

1.12. 2sd965a.pdf Size:101K _secos

D965
D965

2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 ? Audio amplifier 1 ? Flasg unit of camera 2 3 A ? Switching circuit E C B C E B D CLASSIFICATION OF hFE(2) Rank Q R S F G 230 - 380 Range 340 - 600 560 - 800 H K J L Millimeter Mil

1.13. cd965.pdf Size:223K _cdil

D965
D965

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package B C E For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 7 V IC Collector Current 5 A

1.14. 2sd965.pdf Size:335K _htsemi

D965

2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC C

1.15. 2sd965a.pdf Size:555K _htsemi

D965
D965

2SD 965A TRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25? unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V 3 Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V IC Collector Current -Continuous 5 A Collec

1.16. d965.pdf Size:163K _lge

D965
D965

D965(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 6 V IC Collector Cu

1.17. 2sd965a.pdf Size:206K _lge

D965
D965

2SD965A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 Audio amplifier MIN 0.53 0.40 0.48 0.44 Flash unit of camera 2x) 0.13 B 0.35 0.37 1.5 Switching circuit 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value

1.18. 2sd965.pdf Size:828K _wietron

D965
D965

WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE FEATURES : 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25? unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 42 V Collector-Emitter Voltage VCEO 22 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous I

1.19. hsd965.pdf Size:47K _hsmc

D965
D965

Spec. No. : HE6537 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2004.11.30 MICROELECTRONICS CORP. Page No. : 1/4 HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .......................................................................

1.20. btd965n3.pdf Size:246K _cystek

D965
D965

Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B:Base C:Collector

1.21. btd965la3.pdf Size:140K _cystek

D965
D965

Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp. Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features • High current capability • Low collector-to-emitter saturation voltage • High allowable power dissipation • Pb-free package Applications • Relay drivers, lamp drivers, motor drivers, strobes Sy

1.22. btd965a3.pdf Size:236K _cystek

D965
D965

Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp. Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 5A BTD965A3 RCESAT(typ) 0.12Ω Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package

1.23. 2sd965t.pdf Size:1165K _blue-rocket-elect

D965
D965

2SD965T(BR3DG965T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降低,高性能。 Low VCE(sat),high performance. 用途 / Applications 用于音频输出放大。 Audio frequency output amplifier. 内部等效电路 / Equivalent Circuit 引脚

1.24. hd965.pdf Size:260K _shantou-huashan

D965

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD965 █ LOW FREQUENCY AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯⋯⋯⋯⋯⋯⋯

1.25. 2sd965.pdf Size:1219K _kexin

D965
D965

SMD Type Transistors NPN Transistors 2SD965 1.70 0.1 ■ Features ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation and Current ● Mini Power Type Package 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

1.26. 2sd965a.pdf Size:321K _kexin

D965

SMD Type Transistors NPN Transistors 2SD965A 1.70 0.1 ■ Features ● Audio amplifier ● Flash unit of camera ● Switching circuit 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C

1.27. 2sd965a.pdf Size:250K _shenzhen-tuofeng-semi

D965
D965

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter V

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