D965 datasheet, аналоги, основные параметры
Наименование производителя: D965 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 42 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 22 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hFE): 340
Корпус транзистора: TO92
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Аналоги (замена) для D965
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D965 даташит
..1. Size:272K secos
d965.pdf 
D965 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Audio amplifier G H Emitter Flash unit of camera Collector Switching circuit Base J A D CLASSIFICATION OF hFE(2) Millimeter REF. B Min. Max. A 4.40 4.70 Rank R T V B 4.30 4.70 K C 12.70 - R
..2. Size:574K jiangsu
d965.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR Audio Amplifier Flash Unit of Camera 3.BASE Switching Circuit Equivalent Circuit 1
..3. Size:163K lge
d965.pdf 
D965(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 6 V IC Collect
..4. Size:613K haolin elec
d965.pdf 
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) TO-92 FEATURES 1.EMITTER Audio Amplifier 2. COLLECTOR Flash Unit of Camera Switching Circuit 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO
0.1. Size:229K mcc
d965-r.pdf 
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Power Dissipation PCM=0.75W @ Tamb=25 Collector Current ICM=5A Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistors Marking D965T/R
0.2. Size:229K mcc
d965-t.pdf 
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Power Dissipation PCM=0.75W @ Tamb=25 Collector Current ICM=5A Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistors Marking D965T/R
0.5. Size:229K utc
2sd965 2sd965a.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965 Collector-Emitter voltage up to 20 V * UTC 2SD965A Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Ordering Number Pin Assi
0.6. Size:189K utc
d965ss.pdf 
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS Collector-Emitter voltage up to 20 V * D965ASS Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
0.7. Size:18K utc
2sd965.pdf 
UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * Collector-Emitter voltage up to 20 V APPLICATIONS 1 * Audio amplifier * Flash unit of camera * Switching circuit TO-92 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base
0.8. Size:189K utc
d965ass.pdf 
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS Collector-Emitter voltage up to 20 V * D965ASS Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
0.9. Size:101K secos
2sd965a.pdf 
2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Audio amplifier 1 Flasg unit of camera 2 3 A Switching circuit E C B C E B D CLASSIFICATION OF hFE(2) Rank Q R S F G 230 - 380 Range 340 - 600 560 - 800 H K J L Milli
0.10. Size:223K cdil
cd965.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package B C E For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 7 V IC Collector Current
0.11. Size:110K jiangsu
d965v.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base
0.12. Size:335K jiangsu
2sd965a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier Flash unit of camera 3. EMITTER Switching circuit MARKING 965A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V Collector-
0.13. Size:479K jiangsu
2sd965.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package 965 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U
0.14. Size:555K htsemi
2sd965a.pdf 
2SD 965A TRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V 3 Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V IC Collector Current -Continuous 5 A C
0.15. Size:335K htsemi
2sd965.pdf 
2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V
0.16. Size:206K lge
2sd965a.pdf 
2SD965A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 Audio amplifier MIN 0.53 0.40 0.48 0.44 Flash unit of camera 2x) 0.13 B 0.35 0.37 1.5 Switching circuit 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter
0.17. Size:828K wietron
2sd965.pdf 
WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE FEATURES 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 42 V Collector-Emitter Voltage VCEO 22 V Emitter-Base Voltage VEBO 6 V Collector Current -Continu
0.18. Size:47K hsmc
hsd965.pdf 
Spec. No. HE6537 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.11.30 MICROELECTRONICS CORP. Page No. 1/4 HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ....................................................................
0.19. Size:250K shenzhen
2sd965a.pdf 
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter V
0.20. Size:140K cystek
btd965la3.pdf 
Spec. No. C852A3 Issued Date 2004.07.02 CYStech Electronics Corp. Revised Date 2007.04.18 Page No. 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Sy
0.21. Size:246K cystek
btd965n3.pdf 
Spec. No. C847N3 Issued Date 2003.07.02 CYStech Electronics Corp. Revised Date 2013.01.03 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B Base C Collector
0.22. Size:236K cystek
btd965a3.pdf 
Spec. No. C847A3 Issued Date 2003.04.01 CYStech Electronics Corp. Revised Date 2011.02.14 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 5A BTD965A3 RCESAT(typ) 0.12 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386A3 Pb-free package
0.23. Size:1174K blue-rocket-elect
2sd965.pdf 
2SD965 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit / Pinnin
0.24. Size:1175K blue-rocket-elect
2sd965t.pdf 
2SD965T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit
0.26. Size:124K tysemi
2sd965k.pdf 
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V C
0.27. Size:176K tysemi
2sd965-q.pdf 
Product specification 2SD965-Q Unit mm SOT-89 1.50 0.1 4.50 0.1 1.80 0.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44 0.1 0.48 0.1 0.53 0.1 3.00 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
0.28. Size:321K kexin
2sd965a.pdf 
SMD Type Transistors NPN Transistors 2SD965A 1.70 0.1 Features Audio amplifier Flash unit of camera Switching circuit 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C
0.29. Size:1219K kexin
2sd965.pdf 
SMD Type Transistors NPN Transistors 2SD965 1.70 0.1 Features Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V
0.31. Size:382K globaltech semi
gst2sd965.pdf 
GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 22V amplifier and switch. Collector Current 5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)
0.32. Size:3220K slkor
2sd965a-q 2sd965a-r 2sd965a-s.pdf 
2SD965A NPN Transistors 3 Features 2 Low saturation voltage 1.Base 1 Large Collector Power Dissipation and Current 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - Contin
0.33. Size:3119K fuxinsemi
fd965s.pdf 
FD965S TRANSISTOR (NPN) FEATURES Low Collector-Emitter Saturation Voltage SOT-23 Large Collector Power Dissipation and Current 3 2 Mini Power Type Package 1 1. BASE 965 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base V
0.34. Size:386K powersilicon
2sd965 2sd965a.pdf 
DATA SHEET 2SD965/965A NPN PLASTIC ENCAPSULATE TRANSISTORS VOLTAGE 20 30 V CURRENT 5 A FEATURES TO-92 SOT-89 LOW VOLTAGE AND HIGH CURRENT EXCELLENT hFE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE 20V FOR 2SD965 COLLECTOR-EMITTER VOLTAGE 30V FOR 2SD965A LEAD FREE AND HALOGEN-FREE E C MECHANICAL DATA E C B B CASE SOT-89, TO-92 SOLDERABILITY MIL-STD-202,
0.35. Size:767K pjsemi
2sd965asq-q 2sd965asq-r 2sd965asq-s.pdf 
2SD965ASQ NPN Transistor Features SOT-89 Low saturation voltage Large Collector Power Dissipation and Current 1. Base 2. Collector 3.Emitter Marking Q AQ R AR S AS Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V 30 V CEO Unit Em
0.36. Size:2082K cn shikues
2sd965-r 2sd965-s.pdf 
2SD965 TRANSISTOR (NPN) SOT-89 FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D 965 MARKING MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base
0.37. Size:815K cn hottech
2sd965.pdf 
2SD965 BIPOLAR TRANSISTOR (NPN) FEATURES Large Collector Power Dissipation and Current Low Collector-Emitter Saturation Voltage Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parame
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