D965 Datasheet, Equivalent, Cross Reference Search

D965 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Audio amplifier G HEmitter Flash unit of camera Collector Switching circuit Base JA DCLASSIFICATION OF hFE(2) MillimeterREF.BMin. Max.A 4.40 4.70Rank R T VB 4.30 4.70KC 12.70 -R

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsD965 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR Audio Amplifier Flash Unit of Camera 3.BASE Switching Circuit Equivalent Circuit 1

D965(NPN) TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 6 V IC Collect

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) TO-92 FEATURES 1.EMITTER Audio Amplifier 2. COLLECTOR Flash Unit of Camera Switching Circuit 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO

MCCMicro Commercial ComponentsTMD965-T20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311D965-RPhone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Power Dissipation: PCM=0.75W @ Tamb=25 Collector Current: ICM=5APlastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistors Marking: D965T/R

MCCMicro Commercial ComponentsTMD965-T20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311D965-RPhone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Power Dissipation: PCM=0.75W @ Tamb=25 Collector Current: ICM=5APlastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistors Marking: D965T/R

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Ordering Number Pin Assi

UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P

UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTNPN TRANSISTORFEATURES*Collector current up to 5A* Collector-Emitter voltage up to 20 VAPPLICATIONS1* Audio amplifier* Flash unit of camera* Switching circuitTO-921:EMITTER 2:COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL RATING UNITCollector-base

UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P

2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Audio amplifier 1 Flasg unit of camera 23A Switching circuit ECB C E B DCLASSIFICATION OF hFE(2) Rank Q R SF G230 - 380 Range 340 - 600 560 - 800 H KJ LMilli

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965TO-92Plastic PackageBCEFor Low Frequency Power AmplificationABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 40 VVEBOEmitter Base Voltage 7 VICCollector Current

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier Flash unit of camera 3. EMITTER Switching circuit MARKING: 965AMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 VCollector-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package : 965MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

2SD 965ATRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V3Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 VIC Collector Current -Continuous 5 AC

2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V

2SD965A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 32.64.252.43.75Features 0.8 Audio amplifier MIN0.530.400.480.44 Flash unit of camera 2x)0.13 B0.35 0.371.5 Switching circuit 3.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

WEITRON 2SD965NPN TransistorCOLLECTOR2.P b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEFEATURES :1.EMITTERTO-92* Flash unit of camera* Switching circuitMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO 42 VCollector-Emitter Voltage VCEO 22 VEmitter-Base Voltage VEBO 6 VCollector Current -Continu

Spec. No. : HE6537HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.11.30MICROELECTRONICS CORP.Page No. : 1/4HSD965NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD965 is suited for use as AF output amplifier and flash unit.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ....................................................................

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 40 VCollector-Emitter V

Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp.Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Sy

Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp.Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 BBase CCollector

Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp.Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20VIC 5ABTD965A3 RCESAT(typ) 0.12 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386A3 Pb-free package

2SD965 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit / Pinnin

2SD965T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD965 LOW FREQUENCY AMPLIFIER APPLICATIONS. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsProduct specification2SD965KFeaturesLow collector-emitter saturation voltage VCE(sat)Satisfactory operation performances at high efficiency withthe lowvoltage power supply.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 40 VC

Product specification2SD965-QUnit:mmSOT-891.50 0.14.500.11.800.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3the low-voltage power supply.0.440.10.480.1 0.530.13.000.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type TransistorsNPN Transistors2SD965A1.70 0.1 Features Audio amplifier Flash unit of camera Switching circuit0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C

SMD Type TransistorsNPN Transistors2SD9651.70 0.1 Features Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

MAIN CHARACTERISTICS FEATURES IC 5A Epitaxial silicon VCEO 20V High switching speed PC 750mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform

GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 22V amplifier and switch. Collector Current : 5A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)

2SD965ANPN Transistors3 Features2 Low saturation voltage1.Base1 Large Collector Power Dissipation and Current2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - Contin

FD965S TRANSISTOR (NPN)FEATURES Low Collector-Emitter Saturation Voltage SOT-23 Large Collector Power Dissipation and Current 32 Mini Power Type Package 11. BASE : 9652.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base V

DATA SHEET 2SD965/965A NPN PLASTIC ENCAPSULATE TRANSISTORS VOLTAGE 20~30 V CURRENT 5 A FEATURES TO-92SOT-89 LOW VOLTAGE AND HIGH CURRENT EXCELLENT hFE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE 20V FOR 2SD965 COLLECTOR-EMITTER VOLTAGE 30V FOR 2SD965A LEAD FREE AND HALOGEN-FREE ECMECHANICAL DATA E C B B CASE: SOT-89, TO-92 SOLDERABILITY: MIL-STD-202,

2SD965ASQ NPN Transistor Features SOT-89 Low saturation voltage Large Collector Power Dissipation and Current1. Base 2. Collector 3.EmitterMarking: Q: AQR:ARS:ASAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBOCollector Emitter Voltage V 30 V CEOUnitEm

2SD965TRANSISTOR (NPN) SOT-89FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D: 965MARKINGMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base

2SD965BIPOLAR TRANSISTOR (NPN)FEATURES Large Collector Power Dissipation and Current Low Collector-Emitter Saturation Voltage Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParame

Guangdong Province Jieyang Kehe Electronic Industrial Co., Ltd.TO-126 Plastic-Encapsulate TransistorsD965 TRANSISTORNPNFEATURESPower dissipationWTamb=25PCM : 0.75Collector currentICM : 5 ACollector-base voltageV(BR)CBO : 42 VELECTRICAL CHARACTERISTICSTamb=25 specifiedunless otherwiseParameter Symbol Test conditions MIN TYP MAX UNITIc=1mA