EMT1 Todos los transistores

 

EMT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMT1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.15 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT-563
 

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EMT1 datasheet

 ..1. Size:95K  rohm
emt1 umt1n imt1a umt1n.pdf pdf_icon

EMT1

EMT1 / UMT1N / IMT1A Transistors General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A Dimensions (Unit mm) Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT EMT1 package. (6) (5) (4) 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (1) (2) (3) 3) Transistor elements are independent, Each lead has same dimens

 ..2. Size:2869K  rohm
emt1 umt1n imt1a.pdf pdf_icon

EMT1

EMT1 / UMT1N / IMT1A Datasheet General purpose transistor (dual transistors) lOutline l Parameter Tr1 and Tr2 EMT6 UMT6 VCEO -50V IC -150mA EMT1 UMT1N SC-107C SOT-363 SMT6 lFeatures l 1)Two 2SA1037AK chips in a EMT, UMT or SMT package. IMT1A 2)Mounting possible with EMT3, UMT3 or SOT-457 SMT3automati

 ..3. Size:643K  htsemi
emt1.pdf pdf_icon

EMT1

EMT1 General purpose transistors (dual digital transistors) SOT-563 FEATURES Two 2SA1037AK chips in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent,eliminating interference 1 Marking T1 (3) (2) (1) Equivalent circuit Tr1 Tr2 (4) (5) (6) Absolute maximum ratings (Ta=25 ) Symbol Parameter Value Units VCBO

 0.1. Size:100K  philips
pemt1.pdf pdf_icon

EMT1

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product data sheet 2001 Nov 07 Supersedes data of 2001 Sep 25 NXP Semiconductors Product data sheet PNP general purpose double transistor PEMT1 FEATURES PINNING 300 mW total power dissipation PIN DESCRIPTION Very small 1.6 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 Self a

Otros transistores... 3DD13003B , 8050SST , 8550SST , B772S , C1815T , C945T , D882S , D965 , BC548 , M28ST , M8050T , M8550T , MMBT2907FW , MMBT3904FW , MMBT3904Z , MMBT3906FW , MMBT3906Z .

History: TSB1386CY

 

 

 


 
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