EMT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMT1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.15 A
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-563
EMT1 Transistor Equivalent Substitute - Cross-Reference Search
EMT1 Datasheet (PDF)
emt1 umt1n imt1a umt1n.pdf
EMT1 / UMT1N / IMT1A Transistors General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A Dimensions (Unit : mm) Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT EMT1 package. (6) (5) (4)2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (1) (2) (3)3) Transistor elements are independent, Each lead has same dimens
emt1 umt1n imt1a.pdf
EMT1 / UMT1N / IMT1ADatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Tr1 and Tr2 EMT6 UMT6VCEO-50VIC-150mA EMT1 UMT1NSC-107C SOT-363 SMT6lFeaturesl1)Two 2SA1037AK chips in a EMT, UMT or SMT package.IMT1A2)Mounting possible with EMT3, UMT3 orSOT-457 SMT3automati
emt1.pdf
EMT1 General purpose transistors (dual digital transistors) SOT-563 FEATURES Two 2SA1037AK chips in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent,eliminating interference 1 Marking: T1 (3) (2) (1)Equivalent circuit Tr1Tr2(4) (5) (6) Absolute maximum ratings (Ta=25) Symbol Parameter Value UnitsVCBO
pemt1.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D744PEMT1PNP general purpose double transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Sep 25NXP Semiconductors Product data sheetPNP general purpose double transistor PEMT1FEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 1.2 mm ultra thin package1, 4 emitter TR1; TR2 Self a
pemt1.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
emt1fha umt1nfha imt1afra.pdf
EMT1 / UMT1N / IMT1AEMT1FHA / UMT1NFHA / IMT1AFRATransistors AEC-Q101 QualifiedGeneral Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A EMT1FHA / UMT1NFHA / IMT1AFRA Dimensions (Unit : mm) Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT 2SA1037AKFRAEMT1FHAEMT1 package. (6) (5) (4)2) Mounting possible with EMT3 or UMT3 or SMT3 automati
emt18 umt18n imt18.pdf
General purpose transistors(dual transistors) EMT18 / UMT18N / IMT18 Features Dimensions (Unit : mm) 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 EMT18automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions Abbreviated symbol : T18ROHM : EMT6Structure
emt1fha.pdf
EMT1 / UMT1N / IMT1AEMT1FHA / UMT1NFHA / IMT1AFRATransistors AEC-Q101 QualifiedGeneral Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A EMT1FHA / UMT1NFHA / IMT1AFRA Dimensions (Unit : mm) Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT 2SA1037AKFRAEMT1FHAEMT1 package. (6) (5) (4)2) Mounting possible with EMT3 or UMT3 or SMT3 automati
emt18.pdf
General purpose transistors(dual transistors) EMT18 / UMT18N / IMT18 Features Dimensions (Unit : mm) 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 EMT18automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions Abbreviated symbol : T18ROHM : EMT6Structure
emt1dxv6t1g.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6t1 5.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6t5g.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6.pdf
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chemt18gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMT18GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=-0.25V(max.)(IC=200mA) * Low cob. Cob=6.5pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabi
chemt1gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMT1GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabili
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2964 | 2N2972 | 2SA2215 | 2SA217H
History: 2N2964 | 2N2972 | 2SA2215 | 2SA217H
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