LB123T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LB123T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.25
W
Tensión colector-base (Vcb): 600
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar LB123T
LB123T
Datasheet (PDF)
..1. Size:222K lge
lb123t.pdf 
LB123T(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High voltage, high speed power switch Switch regulators 2.500 7.400PWM inverter and Motor controls 2.9001.1007.8001.500 Solenoid and relay drivers 3.900Deflection circuits 3.0004.100MAXIMUM RATINGS* TA=25 unless otherwise noted 10.600 3.2000.00011.
..2. Size:309K wietron
lb123t.pdf
LB123TNPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126*High voltage, high speed power switch *Switch regulators *PWM inverter and Motor controls *Solenoid and relay drivers *Deflection circuits aRating Symbol Value UnitVCBO600 VCollector-Base VoltageVCEO400 VCollector-Emitter VoltageVVEBO 8Emitter-Base Volt
0.1. Size:40K hsmc
hlb123t.pdf
Spec. No. : HT200402HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4HLB123TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123T is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126 High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
9.1. Size:47K hsmc
hlb123d.pdf
Spec. No. : HE6603HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5HLB123DNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123D is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126ML High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
9.2. Size:53K hsmc
hlb123i.pdf
Spec. No. : HI200202HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HLB123INPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123I is designed for high voltage. High speed switching inductive circuitsand amplifier applications.TO-251Features High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
9.3. Size:187K hsmc
hlb123sa.pdf
Spec. No. : HA200601 HI-SINCERITY Issued Date : 2006.12.01 Revised Date : 2009.07,02 MICROELECTRONICS CORP. Page No. : 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-92 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings Pa
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
