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LB123T Specs and Replacement


   Type Designator: LB123T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126

 LB123T Transistor Equivalent Substitute - Cross-Reference Search

   

LB123T detailed specifications

 ..1. Size:222K  lge
lb123t.pdf pdf_icon

LB123T

LB123T(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High voltage, high speed power switch Switch regulators 2.500 7.400 PWM inverter and Motor controls 2.900 1.100 7.800 1.500 Solenoid and relay drivers 3.900 Deflection circuits 3.000 4.100 MAXIMUM RATINGS* TA=25 unless otherwise noted 10.600 3.200 0.000 11.... See More ⇒

 ..2. Size:309K  wietron
lb123t.pdf pdf_icon

LB123T

LB123T NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 *High voltage, high speed power switch *Switch regulators *PWM inverter and Motor controls *Solenoid and relay drivers *Deflection circuits a Rating Symbol Value Unit VCBO 600 V Collector-Base Voltage VCEO 400 V Collector-Emitter Voltage V VEBO 8 Emitter-Base Volt... See More ⇒

 0.1. Size:40K  hsmc
hlb123t.pdf pdf_icon

LB123T

Spec. No. HT200402 HI-SINCERITY Issued Date 1993.05.15 Revised Date 2006.02.20 MICROELECTRONICS CORP. Page No. 1/4 HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126 High Speed Switching Low Saturation Voltage High Reliability Absolut... See More ⇒

 9.1. Size:47K  hsmc
hlb123d.pdf pdf_icon

LB123T

Spec. No. HE6603 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126ML High Speed Switching Low Saturation Voltage High Reliability Absolut... See More ⇒

Detailed specifications: BC847BPDW , BC848BDW , BC848BPDW , BC856BDW , BC857BDW , BC858BDW , C1815LT1 , C945LT1 , BC337 , M8050LT1 , M8550LT1 , MBT2222ADW , MBT2907ADW , MBT3904DW , MBT3906DW , MBT3946DW , MJE13003B .

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