LB123T Datasheet, Equivalent, Cross Reference Search
Type Designator: LB123T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO126
LB123T Transistor Equivalent Substitute - Cross-Reference Search
LB123T Datasheet (PDF)
lb123t.pdf
LB123T(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High voltage, high speed power switch Switch regulators 2.500 7.400PWM inverter and Motor controls 2.9001.1007.8001.500 Solenoid and relay drivers 3.900Deflection circuits 3.0004.100MAXIMUM RATINGS* TA=25 unless otherwise noted 10.600 3.2000.00011.
lb123t.pdf
LB123TNPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126*High voltage, high speed power switch *Switch regulators *PWM inverter and Motor controls *Solenoid and relay drivers *Deflection circuits aRating Symbol Value UnitVCBO600 VCollector-Base VoltageVCEO400 VCollector-Emitter VoltageVVEBO 8Emitter-Base Volt
hlb123t.pdf
Spec. No. : HT200402HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4HLB123TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123T is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126 High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb123d.pdf
Spec. No. : HE6603HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5HLB123DNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123D is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126ML High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb123i.pdf
Spec. No. : HI200202HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HLB123INPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123I is designed for high voltage. High speed switching inductive circuitsand amplifier applications.TO-251Features High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb123sa.pdf
Spec. No. : HA200601 HI-SINCERITY Issued Date : 2006.12.01 Revised Date : 2009.07,02 MICROELECTRONICS CORP. Page No. : 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-92 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings Pa
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
