MMUN2233 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMUN2233  📄📄 

Código: A8K

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.085

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT23

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MMUN2233 datasheet

 0.1. Size:115K  onsemi
nsvmmun2233lt3g.pdf pdf_icon

MMUN2233

MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BR

 0.2. Size:215K  onsemi
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MMUN2233

MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor

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