KTA1704 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTA1704
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 110 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar KTA1704
KTA1704 Datasheet (PDF)
kta1704.pdf
SEMICONDUCTOR KTA1704TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERABHIGH FREQUENCY POWER AMPLIFIER DCEFEATURESFComplementary to KTC2803.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -120 VCollector-Base Voltage_+F 11.0 0.3G 2.9 M
kta1709.pdf
SEMICONDUCTOR KTA1709TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.ABHIGH CURRENT APPLICATION.DCEFEATURESFhFE=100 320 (VCE=-2V, IC=-0.5A).Low Collector Saturation Voltage. G: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E 3.5_+F 11.0 0.3CHARACTER
kta1705.pdf
SEMICONDUCTOR KTA1705TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO AMPLIFIER, VOLTAGE REGULATOR ABDC-DC CONVERTER, RELAY DRIVERDCEFEATURESFLow Saturation Voltage.: VCE(sat) -0.8V (IC=-2A, IB=-0.2A)GExcellent hFE Linearity and high hFE. H: hFE:70 240 (VCE=-2V, IC=-0.5A)DIM MILLIMETERSJA 8.3 MAXComplementary to KTC2804.KB 5.8LC 0.7_+D
kta1703.pdf
SEMICONDUCTOR KTA1703TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ABDC-DC CONVERTER.DCLOW POWER SWITCHING REGULATOR.EFFEATURES High Breakdown Voltage. G: VCEO=-400VHLow Collector Saturation Voltage DIM MILLIMETERSJA 8.3 MAX: VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA)KB 5.8LHigh Speed Switching. C 0.7_+D 3.2 0.1E
kta1700.pdf
SEMICONDUCTOR KTA1700TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. ABDCFEATURESEHigh Transition Frequency : fT=100MHz(Typ.).FComplementary to KTC2800. GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -160 VCollector-Base Voltage_+F 11.0 0.3
kta1700.pdf
isc Silicon PNP Power Transistor KTA1700DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC2800Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: NJVNJD2873T4G | 2SC905 | RN1965
History: NJVNJD2873T4G | 2SC905 | RN1965
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050