KTA1704 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTA1704
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
KTA1704 Transistor Equivalent Substitute - Cross-Reference Search
KTA1704 Datasheet (PDF)
kta1704.pdf
SEMICONDUCTOR KTA1704TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERABHIGH FREQUENCY POWER AMPLIFIER DCEFEATURESFComplementary to KTC2803.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -120 VCollector-Base Voltage_+F 11.0 0.3G 2.9 M
kta1709.pdf
SEMICONDUCTOR KTA1709TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.ABHIGH CURRENT APPLICATION.DCEFEATURESFhFE=100 320 (VCE=-2V, IC=-0.5A).Low Collector Saturation Voltage. G: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E 3.5_+F 11.0 0.3CHARACTER
kta1705.pdf
SEMICONDUCTOR KTA1705TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO AMPLIFIER, VOLTAGE REGULATOR ABDC-DC CONVERTER, RELAY DRIVERDCEFEATURESFLow Saturation Voltage.: VCE(sat) -0.8V (IC=-2A, IB=-0.2A)GExcellent hFE Linearity and high hFE. H: hFE:70 240 (VCE=-2V, IC=-0.5A)DIM MILLIMETERSJA 8.3 MAXComplementary to KTC2804.KB 5.8LC 0.7_+D
kta1703.pdf
SEMICONDUCTOR KTA1703TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ABDC-DC CONVERTER.DCLOW POWER SWITCHING REGULATOR.EFFEATURES High Breakdown Voltage. G: VCEO=-400VHLow Collector Saturation Voltage DIM MILLIMETERSJA 8.3 MAX: VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA)KB 5.8LHigh Speed Switching. C 0.7_+D 3.2 0.1E
kta1700.pdf
SEMICONDUCTOR KTA1700TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. ABDCFEATURESEHigh Transition Frequency : fT=100MHz(Typ.).FComplementary to KTC2800. GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -160 VCollector-Base Voltage_+F 11.0 0.3
kta1700.pdf
isc Silicon PNP Power Transistor KTA1700DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC2800Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: D64ES5
