KTB688B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTB688B  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Capacitancia de salida (Cc): 280 pF

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO3PN-E

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KTB688B datasheet

 ..1. Size:443K  kec
 ktb688b.pdf pdf_icon

KTB688B

SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 45 50W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTD718B. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 + 0.20 E _

 8.1. Size:42K  kec
 ktb688.pdf pdf_icon

KTB688B

SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to KTD718. Recommended for 45 50W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATI

 8.2. Size:223K  inchange semiconductor
 ktb688.pdf pdf_icon

KTB688B

isc Silicon PNP Power Transistor KTB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type KTD718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicat

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