KTB688B Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB688B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 280 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3P(N)-E
KTB688B Transistor Equivalent Substitute - Cross-Reference Search
KTB688B Datasheet (PDF)
ktb688b.pdf
SEMICONDUCTOR KTB688BTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURES O KRecommended for 45 50W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to KTD718B. _A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 + 0.20E_
ktb688.pdf
SEMICONDUCTOR KTB688TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURES Complementary to KTD718. Recommended for 45 50W Audio Frequency DIM MILLIMETERSAmplifier Output Stage.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RATI
ktb688.pdf
isc Silicon PNP Power Transistor KTB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type KTD718Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
