KTC2026 Todos los transistores

SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector Saturation Voltage _ A 10.0 0.3 + _ + B 15.0 0.3 VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. E C _ 2.70 0.3 + D Complementary to KTA1046. 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ 13.6

DIP Type Transistors NPN Transistors KTC2026 Unit mm TO-220F 0.20 0.20 0.20 2.54 Features 0.20 0.70 Low saturation voltage Complementary to KTA1046 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 C

SEMICONDUCTOR KTC2028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L R K _ 3.7 0.2 + L

SEMICONDUCTOR KTC2022D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS VCE(sat)=-2.0V(Max.). _ A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H P K 2.00 + 0.20 _ L 0.50 + 0.

SEMICONDUCTOR KTC2020D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 Straight Lead (IPAK, "L" Suffix) _ F 2.30 + 0.1

SEMICONDUCTOR KTC2025D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ B 6.10 + 0.2 High breakdown voltage VCEO 120V, high current 1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low saturation voltage and good linearity of hFE. _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX C

SEMICONDUCTOR KTC2027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.2 + L 1.2+0.25/-0.1 CHA

SEMICONDUCTOR KTC2020D TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES Low Collector Saturation Voltage VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Straight Lead (IPAK, "L" Suffix) Complementary to KTA1040D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V VC

KTC2020D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , KTA1040D Low VCE(sat),complementary to KTA1040D. / Applications General purpose amplifier for surface mount application

KTC2022I(BR3DA2022I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features , KTA1042I(BR3CA1042I) Low collector-emitter saturation voltage, complementary to KTA1042I(BR3CA1042I). / Applications General pu

DIP Type Transistors NPN Transistors KTC2028 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low Collector-Emitter Saturation Voltage Complementary to KTA1049 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V

SMD Type Transistors Transistors NPN Transistors KTC2020D TO -252 U nit m m Features +0.1 +0.1 5 6. 5 2. 50-0.1 30-0.1 +0.2 +0.8 5. 0. 30-0.2 50-0.7 Low VCE(sat) 1.0V General purpose amplifier for surface mount applications. Complementary to KTA1040D. 0. 127 +0.1 m ax 0. 80-0.1 2 3 1 +0.1 2. 0. 3 60-0.1 1. BASE +0.1 5 4. 5 60-0.1 2. COLLECTOR 3. EMITTER Ab

isc Silicon NPN Power Transistor KTC2020D DESCRIPTION High Breakdown Voltage- V = 60V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI