KTC3600U Todos los transistores

SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.00 0.20 + D 2 NF=1.1dB, S21e 2=13dB (f=1GHz). _ + B 1.25 0.15 _ C 0.90 + 0.10 3 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L 0.70

SEMICONDUCTOR KTC3600S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. L B L NF=1.1dB, S21e 2=13dB (f=1GHz). DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATIN

SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B Low Noise Figure, High Gain. B1 NF=1.1dB, S21e 2=13dB (f=1GHz). DIM MILLIMETERS 1 6 _ A 2.00 0.20 + Two internal isolated Transistors in one package. _ 2 5 A1 1.3 + 0.1 _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2+0.10/-0.05 MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K B K DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.9 + 0.2 16 B 1.6+0.2/-0.1 NF=1.1dB, S21e 2=13dB (f=1GHz). _ C 0.70 + 0.05 2 5 Two internal isolated Transistors in one package. _ + D 0.4 0.1 E 2.8+0.2/-0.3 _ F 1.9 + 0.2 3 4 G 0.95 _ H 0.16 +