KTC3660U Todos los transistores

SEMICONDUCTOR KTC3660U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. TENTATIVE FEATURES Low Noise Figure, High Gain. NF=1.4dB (f=2GHz), S21e 2=13.5dB (f=2GHz). E M B M DIM MILLIMETERS 1 4 D _ A 2.00 + 0.20 MAXIMUM RATING (Ta=25 ) _ B 1.25 + 0.15 _ C 0.90 + 0.10 CHARACTERISTIC SYMBOL RATING UNIT 2 3 D 0.3+0.10/-0.05 _ E

SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B Low Noise Figure, High Gain. B1 NF=1.1dB, S21e 2=13dB (f=1GHz). DIM MILLIMETERS 1 6 _ A 2.00 0.20 + Two internal isolated Transistors in one package. _ 2 5 A1 1.3 + 0.1 _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2+0.10/-0.05 MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.00 0.20 + D 2 NF=1.1dB, S21e 2=13dB (f=1GHz). _ + B 1.25 0.15 _ C 0.90 + 0.10 3 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L 0.70

SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K B K DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.9 + 0.2 16 B 1.6+0.2/-0.1 NF=1.1dB, S21e 2=13dB (f=1GHz). _ C 0.70 + 0.05 2 5 Two internal isolated Transistors in one package. _ + D 0.4 0.1 E 2.8+0.2/-0.3 _ F 1.9 + 0.2 3 4 G 0.95 _ H 0.16 +

SEMICONDUCTOR KTC3620S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES L B L DIM MILLIMETERS Low Noise Figure. _ + A 2.93 0.20 B 1.30+0.20/-0.15 High Gain. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 P 7 MAXIMUM RATING (Ta=25

SEMICONDUCTOR KTC3631D/L TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING. FEATURES A I C J Low Collector Saturation Voltage DIM MILLIMETERS _ A 6.60 + 0.2 VCE(sat)=0.5V(Max.) at (IC=0.5A). _ B 6.10 + 0.2 _ C 5.0 + 0.2 High Switching Speed Typically. _ D 1.10 + 0.2 _ E 2.70 + 0.2 tf 0.4 S at IC=1A. _ F 2.30 + 0.1 H 1.00 MAX Complementary to K

SEMICONDUCTOR KTC3620U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES M B M DIM MILLIMETERS Low Noise Figure. _ A 2.00 0.20 + D High Gain. 2 _ + B 1.25 0.15 _ C 0.90 0.10 + 1 3 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.70 H _ M 0.42+0.10 N 0.10 MIN N N K MAXIMUM RATING

SEMICONDUCTOR KTC3600S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. L B L NF=1.1dB, S21e 2=13dB (f=1GHz). DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATIN

SEMICONDUCTOR KTC3640V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES B Low Noise Figure, High Gain. NF=1.4dB, S21e 2=9.0dB(2GHz) DIM MILLIMETERS 2 _ A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 0.05 + H 0.40 P P MAXIMUM RATING (Ta=25 ) _ J 0.12 + 0.05 _ K 0.2 + 0.05 CHARACTE

SEMICONDUCTOR KTC3620V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES B Low Noise Figure. High Gain. DIM MILLIMETERS 2 _ A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 0.05 + H 0.40 P P _ J 0.12 + 0.05 _ K 0.2 + 0.05 P 5 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNI