KTC3660U Datasheet. Specs and Replacement

Type Designator: KTC3660U  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.0675 W

Maximum Collector-Base Voltage |Vcb|: 8 V

Maximum Collector-Emitter Voltage |Vce|: 4.5 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.015 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 16000 MHz

Collector Capacitance (Cc): 0.65 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: USQ

 KTC3660U Substitution

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KTC3660U datasheet

 ..1. Size:369K  kec

ktc3660u.pdf pdf_icon

KTC3660U

SEMICONDUCTOR KTC3660U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. TENTATIVE FEATURES Low Noise Figure, High Gain. NF=1.4dB (f=2GHz), S21e 2=13.5dB (f=2GHz). E M B M DIM MILLIMETERS 1 4 D _ A 2.00 + 0.20 MAXIMUM RATING (Ta=25 ) _ B 1.25 + 0.15 _ C 0.90 + 0.10 CHARACTERISTIC SYMBOL RATING UNIT 2 3 D 0.3+0.10/-0.05 _ E... See More ⇒

 9.1. Size:80K  kec

ktc3605u.pdf pdf_icon

KTC3660U

SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B Low Noise Figure, High Gain. B1 NF=1.1dB, S21e 2=13dB (f=1GHz). DIM MILLIMETERS 1 6 _ A 2.00 0.20 + Two internal isolated Transistors in one package. _ 2 5 A1 1.3 + 0.1 _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2+0.10/-0.05 MAXIMUM RATING (Ta=25 ) ... See More ⇒

 9.2. Size:83K  kec

ktc3600u.pdf pdf_icon

KTC3660U

SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.00 0.20 + D 2 NF=1.1dB, S21e 2=13dB (f=1GHz). _ + B 1.25 0.15 _ C 0.90 + 0.10 3 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L 0.70... See More ⇒

 9.3. Size:502K  kec

ktc3605t.pdf pdf_icon

KTC3660U

SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K B K DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.9 + 0.2 16 B 1.6+0.2/-0.1 NF=1.1dB, S21e 2=13dB (f=1GHz). _ C 0.70 + 0.05 2 5 Two internal isolated Transistors in one package. _ + D 0.4 0.1 E 2.8+0.2/-0.3 _ F 1.9 + 0.2 3 4 G 0.95 _ H 0.16 + ... See More ⇒

Detailed specifications: KTC3600U, KTC3605T, KTC3605U, KTC3620S, KTC3620U, KTC3620V, KTC3631L, KTC3640V, D882, KTC3708U, KTC3730U, KTC3730V, KTC3770S, KTC3770T, KTC3770U, KTC3770UL, KTC3770V

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