Биполярный транзистор KTC3660U - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC3660U
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.0675 W
Макcимально допустимое напряжение коллектор-база (Ucb): 8 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 4.5 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1.5 V
Макcимальный постоянный ток коллектора (Ic): 0.015 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 16000 MHz
Ёмкость коллекторного перехода (Cc): 0.65 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: USQ
KTC3660U Datasheet (PDF)
ktc3660u.pdf
SEMICONDUCTOR KTC3660UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.TENTATIVEFEATURESLow Noise Figure, High Gain.NF=1.4dB (f=2GHz), |S21e|2=13.5dB (f=2GHz).EM B MDIM MILLIMETERS1 4 D_A 2.00 + 0.20MAXIMUM RATING (Ta=25)_B 1.25 + 0.15_C 0.90 + 0.10CHARACTERISTIC SYMBOL RATING UNIT2 3D 0.3+0.10/-0.05_E
ktc3605u.pdf
SEMICONDUCTOR KTC3605UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESBLow Noise Figure, High Gain. B1NF=1.1dB, |S21e|2=13dB (f=1GHz).DIM MILLIMETERS1 6_A 2.00 0.20+Two internal isolated Transistors in one package._2 5 A1 1.3 + 0.1_B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.10/-0.05MAXIMUM RATING (Ta=25 )
ktc3600u.pdf
SEMICONDUCTOR KTC3600UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.1dB, |S21e|2=13dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70
ktc3605t.pdf
SEMICONDUCTOR KTC3605TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURES K B KDIM MILLIMETERSLow Noise Figure, High Gain._A 2.9 + 0.216B 1.6+0.2/-0.1NF=1.1dB, |S21e|2=13dB (f=1GHz)._C 0.70 + 0.052 5Two internal isolated Transistors in one package. _+D 0.4 0.1E 2.8+0.2/-0.3_F 1.9 + 0.23 4G 0.95_H 0.16 +
ktc3620s.pdf
SEMICONDUCTOR KTC3620STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURES L B LDIM MILLIMETERSLow Noise Figure._+A 2.93 0.20B 1.30+0.20/-0.15High Gain.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10L 0.55P PM 0.20 MINN 1.00+0.20/-0.10P 7MAXIMUM RATING (Ta=25
ktc3631d l.pdf
SEMICONDUCTOR KTC3631D/LTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING.FEATURES AI C JLow Collector Saturation VoltageDIM MILLIMETERS_A 6.60 + 0.2: VCE(sat)=0.5V(Max.) at (IC=0.5A)._B 6.10 + 0.2_C 5.0 + 0.2High Switching Speed Typically. _D 1.10 + 0.2_E 2.70 + 0.2: tf 0.4 S at IC=1A. _F 2.30 + 0.1H 1.00 MAXComplementary to K
ktc3620u.pdf
SEMICONDUCTOR KTC3620UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURESM B MDIM MILLIMETERSLow Noise Figure._A 2.00 0.20+DHigh Gain. 2 _+B 1.25 0.15_C 0.90 0.10+1 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30K 0.00-0.10L 0.70H_M 0.42+0.10N 0.10 MINN NKMAXIMUM RATING
ktc3600s.pdf
SEMICONDUCTOR KTC3600STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.L B LNF=1.1dB, |S21e|2=13dB (f=1GHz). DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25 )H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATIN
ktc3640v.pdf
SEMICONDUCTOR KTC3640VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURESBLow Noise Figure, High Gain.NF=1.4dB, S21e 2=9.0dB(2GHz)DIM MILLIMETERS2_A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_G 0.8 0.05+H 0.40P PMAXIMUM RATING (Ta=25 )_J 0.12 + 0.05_K 0.2 + 0.05CHARACTE
ktc3620v.pdf
SEMICONDUCTOR KTC3620VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURESBLow Noise Figure.High Gain.DIM MILLIMETERS2_A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_G 0.8 0.05+H 0.40P P_J 0.12 + 0.05_K 0.2 + 0.05P 5MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNI
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050