KTC5706L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC5706L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: IPAK
Búsqueda de reemplazo de transistor bipolar KTC5706L
KTC5706L Datasheet (PDF)
ktc5706.pdf
SEMICONDUCTOR KTC5706TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,ABMOTOR DRIVERS, STROBES APPLICATION.DCEFEATURESFAdoption of FBET, MBIT Processes.High Current Capacitance.GLow Collector-to-Emitter Saturation Voltage.HHigh-Speed Switching.DIM MILLIMETERSJA 8.3 MAXUltra small Package Facilitates Miniaturizatio
ktc5706d-l.pdf
SEMICONDUCTOR KTC5706D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.AI FEATURESC JAdoption of FBET, MBIT Processes.DIM MILLIMETERS_High Current Capacitance. A 6.60 + 0.2_B 6.10 + 0.2Low Collector-to-Emitter Saturation Voltage._C 5.0 + 0.2_D 1.10 + 0.2High-Speed Switc
ktc5707d l.pdf
SEMICONDUCTOR KTC5707D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.AI FEATURESC JAdoption of FBET, MBIT Processes.DIM MILLIMETERS_High Current Capacitance. A 6.60 + 0.2_B 6.10 + 0.2Low Collector-to-Emitter Saturation Voltage._C 5.0 + 0.2_D 1.10 + 0.2High-Speed Switching._
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .