KTC5706L Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC5706L
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: IPAK
KTC5706L Transistor Equivalent Substitute - Cross-Reference Search
KTC5706L Datasheet (PDF)
ktc5706.pdf
SEMICONDUCTOR KTC5706TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,ABMOTOR DRIVERS, STROBES APPLICATION.DCEFEATURESFAdoption of FBET, MBIT Processes.High Current Capacitance.GLow Collector-to-Emitter Saturation Voltage.HHigh-Speed Switching.DIM MILLIMETERSJA 8.3 MAXUltra small Package Facilitates Miniaturizatio
ktc5706d-l.pdf
SEMICONDUCTOR KTC5706D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.AI FEATURESC JAdoption of FBET, MBIT Processes.DIM MILLIMETERS_High Current Capacitance. A 6.60 + 0.2_B 6.10 + 0.2Low Collector-to-Emitter Saturation Voltage._C 5.0 + 0.2_D 1.10 + 0.2High-Speed Switc
ktc5707d l.pdf
SEMICONDUCTOR KTC5707D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.AI FEATURESC JAdoption of FBET, MBIT Processes.DIM MILLIMETERS_High Current Capacitance. A 6.60 + 0.2_B 6.10 + 0.2Low Collector-to-Emitter Saturation Voltage._C 5.0 + 0.2_D 1.10 + 0.2High-Speed Switching._
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
