KTC601UGR
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC601UGR
Código: L6
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: USV
Búsqueda de reemplazo de transistor bipolar KTC601UGR
KTC601UGR
Datasheet (PDF)
7.1. Size:40K kec
ktc601u.pdf
SEMICONDUCTOR KTC601UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURES B1A super-minimold package houses 2 transistor.1 5DIM MILLIMETERS_Excellent temperature response between these 2 transistor. A 2.00 + 0.202 _A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D_B1 1.25 + 0.1The follwin
7.2. Size:1038K kexin
ktc601u.pdf
SMD Type TransistorsNPN TransistorsKTC601USOT-353 Unit: mm1.3+0.1-0.10.65 Features Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2.+0.1 +0.050.1-0.020.3 -0.1+0.12.1-0.15 41. Q1 BASE2. Q , Q EMITTER1 23. Q BASE 24. Q COLLECTOR25. Q COLLECTOR
8.1. Size:42K kec
ktc601e.pdf
SEMICONDUCTOR KTC601ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESA super-minimold package houses 2 transistor.Excellent temperature response between these 2 transistor.1 5 DIM MILLIMETERS_A 1.6 0.05+High pairing property in hFE._+A1 1.0 0.052_+B 1.6 0.05The follwing characteristics are commo
8.2. Size:708K kec
ktc601f.pdf
SEMICONDUCTOR KTC601FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.TENTATIVEFEATURESThin fine pitch super mini 5pin.Excellent temperature response between these 2 transistor.High pairing property in hFE.The follwing characteristics are common for Q1, Q2.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCB
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.