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KTD1347 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTD1347

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 25 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO92L

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KTD1347 Datasheet (PDF)

1.1. ktd1347.pdf Size:87K _kec

KTD1347
KTD1347

SEMICONDUCTOR KTD1347 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT B D FEATURES Adoption of MBIT processes. DIM MILLIMETERS P Low collector-to-emitter saturation voltage. DEPTH:0.2 A 7.20 MAX Fast switching speed. B 5.20 MAX C C 0.60 MAX S Large current capacity and wide ASO. D 2.50 MAX Q E 1.15 MAX

5.1. ktd1304.pdf Size:244K _secos

KTD1347
KTD1347

KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High emitter-base voltage: VEBO=12V(Min) low on resistance: Ron=0.6Ω(max)(IB=1mA) PACKAGE DIMENSIONS SOT-23 Collector 3 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400 2 Emitter C 0.890 1.110 D

5.2. ktd1302.pdf Size:70K _kec

KTD1347
KTD1347

SEMICONDUCTOR KTD1302 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. B C FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). N DIM MILLIMETERS Low on Resistance :RON=0.6 (Typ.) (IB=1mA). A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45

 5.3. ktd1304.pdf Size:354K _kec

KTD1347
KTD1347

SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES E L B L ·High Emitter-Base Voltage : VEBO=12V(Min.). DIM MILLIMETERS ·High Reverse hFE _ + A 2.93 0.20 B 1.30+0.20/-0.15 : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Low on Resistance : RON=0.6Ω(Max.) (IB=1mA). E 2.40+0.30/-0.20 1 G 1.90

5.4. ktd1303.pdf Size:496K _kec

KTD1347
KTD1347

SEMICONDUCTOR KTD1303 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B ·High Emitter-Base Voltage : VEBO=12V(Min.). ·High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). DIM MILLIMETERS O A 3.20 MAX ·Low on Resistance :RON=0.6Ω(Typ.) (IB=1mA). H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX

 5.5. ktd1302.pdf Size:456K _htsemi

KTD1347

 KTD1302 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package Audio Muting Application 2. COLLECTOR High Emitter-Base Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current 300 mA PC Collector

5.6. ktd1304.pdf Size:907K _htsemi

KTD1347
KTD1347

 KTD1304 SOT-23 TRANSISTOR (NPN) FEATURES ·High emitter-base voltage 1. BASE ·low on resistance 2. EMITTER 3.COLLECTOR MARKING: MAX MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.3 A PC Collector

5.7. ktd1304.pdf Size:207K _lge

KTD1347
KTD1347

 KTD1304 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3.COLLECTOR Features High emitter-base voltage:VEBO=12V(Min) low on resistance:Ron=0.6Ω(max)(IB=1mA) MARKING: MAX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emit

5.8. ktd1304.pdf Size:370K _wietron

KTD1347
KTD1347

KTD1304 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 3 1 2 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 25 V Collector-Base Voltage VCEO 20 V Collector-Emitter Voltage V VEBO 12 Emitter-Base Voltage IC Collector Current-Continuous 0.3 A PC 0.2 W Collector Power Disspation Junction Temperature TJ 150 ˚C -55 - 150 Storage Temperature Tstg ˚C WE

5.9. ktd1302.pdf Size:303K _kexin

KTD1347

SMD Type Transistors NPN Transistors KTD1302 1.70 0.1 ■ Features ● Small Flat Package ● Audio Muting Application 0.42 0.1 0.46 0.1 ● High Emitter-Base Voltage 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 12 Colle

5.10. ktd1304s.pdf Size:767K _kexin

KTD1347
KTD1347

SMD Type Transistors NPN Transistors KTD1304 (KTD1304S) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE 1 2 +0.02 +0.1 ● Low on Resistance 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1. Base 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector -

5.11. ktd1304.pdf Size:939K _kexin

KTD1347
KTD1347

SMD Type Transistors NPN Transistors KTD1304 (KTD1304S) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resistance 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Vo

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