All Transistors. KTD1347 Datasheet

 

KTD1347 Datasheet and Replacement


   Type Designator: KTD1347
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92L
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KTD1347 Datasheet (PDF)

 ..1. Size:87K  kec
ktd1347.pdf pdf_icon

KTD1347

SEMICONDUCTOR KTD1347TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTB DFEATURES Adoption of MBIT processes.DIM MILLIMETERSP Low collector-to-emitter saturation voltage.DEPTH:0.2A 7.20 MAX Fast switching speed. B 5.20 MAXCC 0.60 MAXS Large current capacity and wide ASO.D 2.50 MAXQE 1.15 MAX

 9.1. Size:244K  secos
ktd1304.pdf pdf_icon

KTD1347

KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES High emitter-base voltage: VEBO=12V(Min) low on resistance: Ron=0.6(max)(IB=1mA) PACKAGE DIMENSIONS SOT-23Collector3Dim Min MaxA 2.800 3.0401BaseB 1.200 1.4002EmitterC 0.890 1.110D

 9.2. Size:496K  kec
ktd1303.pdf pdf_icon

KTD1347

SEMICONDUCTOR KTD1303TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO MUTING APPLICATION.FEATURESBHigh Emitter-Base Voltage : VEBO=12V(Min.).High Reverse hFE: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).DIM MILLIMETERSOA 3.20 MAXLow on Resistance :RON=0.6(Typ.) (IB=1mA).HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAX

 9.3. Size:70K  kec
ktd1302.pdf pdf_icon

KTD1347

SEMICONDUCTOR KTD1302TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO MUTING APPLICATION.B CFEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).N DIM MILLIMETERS Low on Resistance :RON=0.6 (Typ.) (IB=1mA).A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: PZT4672 | MPQ3642 | 2SC2867 | DTC511 | BSY43 | 2N3151 | IR4055

Keywords - KTD1347 transistor datasheet

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