2N5999 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5999
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2N5999
2N5999 Datasheet (PDF)
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2n5989 2n5990 2n5991.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
2n5989 2n5990 2n5991.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.
2n5991.pdf
isc Silicon NPN Power Transistor 2N5991DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier andswitching circuitsABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... 2N5990 , 2N5991 , 2N5992 , 2N5993 , 2N5994 , 2N5995 , 2N5996 , 2N5998 , 4124 , 2N59A , 2N59B , 2N59C , 2N60 , 2N600 , 2N6000 , 2N6001 , 2N6002 .
Liste
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