2N5999 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5999

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO92

 Búsqueda de reemplazo de 2N5999

- Selecciónⓘ de transistores por parámetros

 

2N5999 datasheet

 ..1. Size:1285K  sprague
 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf pdf_icon

2N5999

 9.1. Size:769K  motorola
 2n5986-89 2n5991.pdf pdf_icon

2N5999

 9.2. Size:117K  jmnic
 2n5989 2n5990 2n5991.pdf pdf_icon

2N5999

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3

 9.3. Size:122K  inchange semiconductor
 2n5989 2n5990 2n5991.pdf pdf_icon

2N5999

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

MOSTRAR MÁS

Otros transistores... 2N5990, 2N5991, 2N5992, 2N5993, 2N5994, 2N5995, 2N5996, 2N5998, MJE350, 2N59A, 2N59B, 2N59C, 2N60, 2N600, 2N6000, 2N6001, 2N6002