All Transistors. 2N5999 Datasheet

 

2N5999 Datasheet and Replacement


   Type Designator: 2N5999
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO92
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2N5999 Datasheet (PDF)

 9.1. Size:769K  motorola
2n5986-89 2n5991.pdf pdf_icon

2N5999

 9.2. Size:117K  jmnic
2n5989 2n5990 2n5991.pdf pdf_icon

2N5999

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

 9.3. Size:122K  inchange semiconductor
2n5989 2n5990 2n5991.pdf pdf_icon

2N5999

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.

Datasheet: 2N5990 , 2N5991 , 2N5992 , 2N5993 , 2N5994 , 2N5995 , 2N5996 , 2N5998 , BC639 , 2N59A , 2N59B , 2N59C , 2N60 , 2N600 , 2N6000 , 2N6001 , 2N6002 .

History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | 2SD1631

Keywords - 2N5999 transistor datasheet

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